Metastability in slow thin-film reactions
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 1198-1201 |
| Journal / Publication | Physical Review B |
| Volume | 43 |
| Issue number | 1 |
| Publication status | Published - 1991 |
| Externally published | Yes |
Link(s)
Abstract
The phenomenon of slow amorphization during a constant-temperature and constant-pressure thin-film reaction is explained by a kinetic model emphasizing the rate of transition. We assume that the reaction obeys a maximum time-dependent rather than time-independent negative free-energy change. The product persists in the metastable state due to a high activation barrier to later transition. An amorphous Rh-Si alloy formed by thermally reacting a crystalline Rh thin film and single-crystal Si is reported. © 1991 The American Physical Society.
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Citation Format(s)
Metastability in slow thin-film reactions. / Tu, K. N.; Herd, S. R.; Gösele, U.
In: Physical Review B, Vol. 43, No. 1, 1991, p. 1198-1201.
In: Physical Review B, Vol. 43, No. 1, 1991, p. 1198-1201.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
