Metamorphic in Asy P1-y (y=0.30-0.75) and Alδ In1-δ Asy P1-y buffer layers on InP substrates

Steven S. Bui; Henry P. Lee; Kin Man Yu

doi:10.1063/1.2742649

Metamorphic in Asy P1-y (y=0.30-0.75) and Alδ In1-δ Asy P1-y buffer layers on InP substrates

Steven S. Bui^*, Henry P. Lee^*, Kin Man Yu

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

8 Citations (Scopus)

Abstract

The authors report the growth and characterization of In Asy P1-y and Alδ In1-δ Asy P1-y buffer layers on InP by metal-organic vapor phase epitaxy. Under optimized growth conditions, they achieved sheet resistances of 2.8× 105 and 4.8× 104 /sq for single layer In As0.44 P0.56 (0.5 μm) and step-graded In As0.75 P0.25 In As0.42 P0.58 (0.0750.5 μm) layers, respectively. A bowing parameter for In Asy P1-y of -0.22 eV is found based on photoreflectance measurement. When 0.5 μm thick Al0.11 In0.89 As.62 P.38 is grown, they obtain sheet resistance and sheet carrier concentration of 7.76× 105 /sq and 7.92× 109 cm-2, respectively. This opens interesting possibilities for realizing high-performance metamorphic field-effect transistors based on strained InAs or In Asy P1-y (0.5

Original language	English
Article number	212113
Journal	Applied Physics Letters
Volume	90
Issue number	21
DOIs	https://doi.org/10.1063/1.2742649
Publication status	Published - 2007
Externally published	Yes

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@article{0f8ec1abc1014bb5aa46e30d7cf7e5f6,

title = "Metamorphic in Asy P1-y (y=0.30-0.75) and Alδ In1-δ Asy P1-y buffer layers on InP substrates",

abstract = "The authors report the growth and characterization of In Asy P1-y and Alδ In1-δ Asy P1-y buffer layers on InP by metal-organic vapor phase epitaxy. Under optimized growth conditions, they achieved sheet resistances of 2.8× 105 and 4.8× 104 /sq for single layer In As0.44 P0.56 (0.5 μm) and step-graded In As0.75 P0.25 In As0.42 P0.58 (0.0750.5 μm) layers, respectively. A bowing parameter for In Asy P1-y of -0.22 eV is found based on photoreflectance measurement. When 0.5 μm thick Al0.11 In0.89 As.62 P.38 is grown, they obtain sheet resistance and sheet carrier concentration of 7.76× 105 /sq and 7.92× 109 cm-2, respectively. This opens interesting possibilities for realizing high-performance metamorphic field-effect transistors based on strained InAs or In Asy P1-y (0.5",

author = "Bui, {Steven S.} and Lee, {Henry P.} and Yu, {Kin Man}",

year = "2007",

doi = "10.1063/1.2742649",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

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TY - JOUR

T1 - Metamorphic in Asy P1-y (y=0.30-0.75) and Alδ In1-δ Asy P1-y buffer layers on InP substrates

AU - Bui, Steven S.

AU - Lee, Henry P.

AU - Yu, Kin Man

PY - 2007

Y1 - 2007

N2 - The authors report the growth and characterization of In Asy P1-y and Alδ In1-δ Asy P1-y buffer layers on InP by metal-organic vapor phase epitaxy. Under optimized growth conditions, they achieved sheet resistances of 2.8× 105 and 4.8× 104 /sq for single layer In As0.44 P0.56 (0.5 μm) and step-graded In As0.75 P0.25 In As0.42 P0.58 (0.0750.5 μm) layers, respectively. A bowing parameter for In Asy P1-y of -0.22 eV is found based on photoreflectance measurement. When 0.5 μm thick Al0.11 In0.89 As.62 P.38 is grown, they obtain sheet resistance and sheet carrier concentration of 7.76× 105 /sq and 7.92× 109 cm-2, respectively. This opens interesting possibilities for realizing high-performance metamorphic field-effect transistors based on strained InAs or In Asy P1-y (0.5

AB - The authors report the growth and characterization of In Asy P1-y and Alδ In1-δ Asy P1-y buffer layers on InP by metal-organic vapor phase epitaxy. Under optimized growth conditions, they achieved sheet resistances of 2.8× 105 and 4.8× 104 /sq for single layer In As0.44 P0.56 (0.5 μm) and step-graded In As0.75 P0.25 In As0.42 P0.58 (0.0750.5 μm) layers, respectively. A bowing parameter for In Asy P1-y of -0.22 eV is found based on photoreflectance measurement. When 0.5 μm thick Al0.11 In0.89 As.62 P.38 is grown, they obtain sheet resistance and sheet carrier concentration of 7.76× 105 /sq and 7.92× 109 cm-2, respectively. This opens interesting possibilities for realizing high-performance metamorphic field-effect transistors based on strained InAs or In Asy P1-y (0.5

UR - http://www.scopus.com/inward/record.url?scp=34249719005&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-34249719005&origin=recordpage

U2 - 10.1063/1.2742649

DO - 10.1063/1.2742649

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212113

ER -

Metamorphic in Asy P1-y (y=0.30-0.75) and Alδ In1-δ Asy P1-y buffer layers on InP substrates

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