Metallization of GaN Thin Films Prepared by Ion Beam Assisted Molecular Beam Epitaxy

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • J.S. Chan
  • T.C. Fu
  • N.W. Cheung
  • N. Newman
  • X. Liu
  • J.T. Ross
  • M.D. Rubin

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)223-227
Journal / PublicationMaterials Research Society Symposium - Proceedings
Volume339
Publication statusPublished - Dec 1994

Conference

Title1994 MRS Spring Meeting
PlaceUnited States
CitySan Francisco, CA
Period4 - 8 April 1994

Abstract

Gallium nitride has generated much interest due to its ability to emit light in the blue to UV range [1]. We have investigated the ohmic contact properties of various metals evaporated onto highly auto-doped n-type GaN thin films which were grown on basal sapphire substrates by ion-assisted molecular beam epitaxy (IAMBE). Electrical measurements of transmission line structures with the metals In, InSn and AuGeNi revealed a wide range of contact resistivity (10-2 to 10-6 Ω-cm2) which changed with annealing.

Bibliographic Note

Research Unit(s) information for this publication is provided by the author(s) concerned.

Citation Format(s)

Metallization of GaN Thin Films Prepared by Ion Beam Assisted Molecular Beam Epitaxy. / Chan, J.S.; Fu, T.C.; Cheung, N.W. et al.
In: Materials Research Society Symposium - Proceedings, Vol. 339, 12.1994, p. 223-227.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review