Metallization of GaN Thin Films Prepared by Ion Beam Assisted Molecular Beam Epitaxy

J. S. Chan; T. C. Fu; N. W. Cheung; N. Newman; X.   Liu; J. T. Ross; M. D. Rubin; P. Chu

doi:10.1557/PROC-339-223

Author(s)

J. S. Chan
T. C. Fu
N. W. Cheung
N. Newman
X. Liu
J. T. Ross
M. D. Rubin

Related Research Unit(s)

Department of Physics

Detail(s)

Original language	English
Pages (from-to)	223-227
Journal / Publication	Materials Research Society Symposium - Proceedings
Volume	339
Publication status	Published - Dec 1994

Conference

Title	1994 MRS Spring Meeting
Place	United States
City	San Francisco, CA
Period	4 - 8 April 1994

Link(s)

DOI	DOI https://doi.org/10.1557/PROC-339-223 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0028731991&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(06c3b64c-2fb6-4c47-bbb9-ff53250dc2bd).html

Abstract

Gallium nitride has generated much interest due to its ability to emit light in the blue to UV range [1]. We have investigated the ohmic contact properties of various metals evaporated onto highly auto-doped n-type GaN thin films which were grown on basal sapphire substrates by ion-assisted molecular beam epitaxy (IAMBE). Electrical measurements of transmission line structures with the metals In, InSn and AuGeNi revealed a wide range of contact resistivity (10^-2 to 10^-6 Ω-cm²) which changed with annealing.

Bibliographic Note

Research Unit(s) information for this publication is provided by the author(s) concerned.

Citation Format(s)

[ RIS ] [ BibTeX ]

Metallization of GaN Thin Films Prepared by Ion Beam Assisted Molecular Beam Epitaxy. / Chan, J. S.; Fu, T. C.; Cheung, N. W. et al.
In: Materials Research Society Symposium - Proceedings, Vol. 339, 12.1994, p. 223-227.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Chan, JS, Fu, TC, Cheung, NW, Newman, N, Liu, X, Ross, JT, Rubin, MD & Chu, P 1994, 'Metallization of GaN Thin Films Prepared by Ion Beam Assisted Molecular Beam Epitaxy', Materials Research Society Symposium - Proceedings, vol. 339, pp. 223-227. https://doi.org/10.1557/PROC-339-223

Chan, J. S., Fu, T. C., Cheung, N. W., Newman, N., Liu, X., Ross, J. T., Rubin, M. D., & Chu, P. (1994). Metallization of GaN Thin Films Prepared by Ion Beam Assisted Molecular Beam Epitaxy. Materials Research Society Symposium - Proceedings, 339, 223-227. https://doi.org/10.1557/PROC-339-223

Chan JS, Fu TC, Cheung NW, Newman N, Liu X, Ross JT et al. Metallization of GaN Thin Films Prepared by Ion Beam Assisted Molecular Beam Epitaxy. Materials Research Society Symposium - Proceedings. 1994 Dec;339:223-227. doi: 10.1557/PROC-339-223

Chan, J. S. ; Fu, T. C. ; Cheung, N. W. et al. / Metallization of GaN Thin Films Prepared by Ion Beam Assisted Molecular Beam Epitaxy. In: Materials Research Society Symposium - Proceedings. 1994 ; Vol. 339. pp. 223-227.