Metallization of CVD diamond films by ion beam assisted deposition
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 241-246 |
| Journal / Publication | Materials Chemistry and Physics |
| Volume | 62 |
| Issue number | 3 |
| Publication status | Published - 1 Feb 2000 |
Link(s)
Abstract
An ion beam assisted deposition (IBAD) technique was employed to prepare Ti/Ni intermediate layers. These intermediate layers were between the magnetron sputtered AuSn film and chemical vapor deposited diamond (CVDD) substrate. IBAD was shown to be very effective in the development of a reliable metallization system for CVDD. The IBAD method increased the interface adhesion between the Ti/Ni layers and CVDD due to the formation of TiC at the diamond-metal interface. The solid state reaction product of such a CVDD/Ti/Ni/AuSn system annealed at 300 °C was investigated by Rutherford backscattering spectrometry. The results showed the interaction between the metals in both AuSn and Ni layers of the CVDD/Ti/Ni/AuSn sample during the post-deposition annealing.
Citation Format(s)
Metallization of CVD diamond films by ion beam assisted deposition. / Tjong, S. C.; Wong, N. B.; Li, G. et al.
In: Materials Chemistry and Physics, Vol. 62, No. 3, 01.02.2000, p. 241-246.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
