Metal-Guided Selective Growth of 2D Materials : Demonstration of a Bottom-Up CMOS Inverter

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Ming-Hui Chiu
  • Hao-Ling Tang
  • Chien-Chih Tseng
  • Yimo Han
  • Areej Aljarb
  • Yi Wan
  • Jui-Han Fu
  • Xixiang Zhang
  • Wen-Hao Chang
  • David A. Muller
  • Taishi Takenobu
  • Vincent Tung
  • Lain-Jong Li

Detail(s)

Original languageEnglish
Article number1900861
Journal / PublicationAdvanced Materials
Volume31
Issue number18
Publication statusPublished - 3 May 2019
Externally publishedYes

Abstract

2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large-area electronics and circuits strongly relies on wafer-scale, selective growth of quality 2D TMDs. Here, a scalable method, namely, metal-guided selective growth (MGSG), is reported. The success of control over the transition-metal-precursor vapor pressure, the first concurrent growth of two dissimilar monolayer TMDs, is demonstrated in conjunction with lateral or vertical TMD heterojunctions at precisely desired locations over the entire wafer in a single chemical vapor deposition (VCD) process. Owing to the location selectivity, MGSG allows the growth of p- and n-type TMDs with spatial homogeneity and uniform electrical performance for circuit applications. As a demonstration, the first bottom-up complementary metal-oxide-semiconductor inverter based on p-type WSe <sub>2</sub> and n-type MoSe <sub>2</sub> is achieved, which exhibits a high and reproducible voltage gain of 23 with little dependence on position. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Research Area(s)

  • 2D materials, chemical vapor deposition, heterojunctions, molybdenum diselenide, selective growth, transition metal dichalcogenides, tungsten diselenide

Bibliographic Note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Citation Format(s)

Metal-Guided Selective Growth of 2D Materials: Demonstration of a Bottom-Up CMOS Inverter. / Chiu, Ming-Hui; Tang, Hao-Ling; Tseng, Chien-Chih et al.
In: Advanced Materials, Vol. 31, No. 18, 1900861, 03.05.2019.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review