Metal vapor vacuum arc ion implantation for seeding of electroless Cu plating

X. Y. Qian; M. H. Kiang; N. W. Cheung; I. G. Brown; X. Godechot; J. E. Galvin; R. A. MacGill; K. M. Yu

doi:10.1016/0168-583X(91)96302-2

Metal vapor vacuum arc ion implantation for seeding of electroless Cu plating

X. Y. Qian, M. H. Kiang, N. W. Cheung, I. G. Brown, X. Godechot, J. E. Galvin, R. A. MacGill, K. M. Yu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

14 Citations (Scopus)

Abstract

A metal vapor vacuum arc (MEVVA) ion source has been used to implant Pd into SiO₂ substrates. The ion implanted area formed a seeding layer on which a Cu film was successfully plated through an electroless plating process. It was found that the required Pd dose for Cu plating to occur is on the order of 3×10¹⁵ cm^-2 when the implantation was performed with a 20 kV extraction voltage. Taking advantage of the large pulsed ion current capability (up to 1 A) of the MEVVA ion source, the needed Pd dose for seeding was achieved in minutes. With direct Pd implantation, an intermediate activation step using PdCl₂ solution can be eliminated. The Cu plating rate was not a sensitive function of temperature and no incubation period was found in our experiments. © 1991.

Original language	English
Pages (from-to)	893-897
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	55
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(91)96302-2
Publication status	Published - 2 Apr 1991
Externally published	Yes

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@article{e4f926a1b68e47c38d443607c2c410ac,

title = "Metal vapor vacuum arc ion implantation for seeding of electroless Cu plating",

abstract = "A metal vapor vacuum arc (MEVVA) ion source has been used to implant Pd into SiO2 substrates. The ion implanted area formed a seeding layer on which a Cu film was successfully plated through an electroless plating process. It was found that the required Pd dose for Cu plating to occur is on the order of 3×1015 cm-2 when the implantation was performed with a 20 kV extraction voltage. Taking advantage of the large pulsed ion current capability (up to 1 A) of the MEVVA ion source, the needed Pd dose for seeding was achieved in minutes. With direct Pd implantation, an intermediate activation step using PdCl2 solution can be eliminated. The Cu plating rate was not a sensitive function of temperature and no incubation period was found in our experiments. {\textcopyright} 1991.",

author = "Qian, {X. Y.} and Kiang, {M. H.} and Cheung, {N. W.} and Brown, {I. G.} and X. Godechot and Galvin, {J. E.} and MacGill, {R. A.} and Yu, {K. M.}",

year = "1991",

month = apr,

day = "2",

doi = "10.1016/0168-583X(91)96302-2",

language = "English",

volume = "55",

pages = "893--897",

journal = "Nuclear Inst. and Methods in Physics Research, B",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Metal vapor vacuum arc ion implantation for seeding of electroless Cu plating

AU - Qian, X. Y.

AU - Kiang, M. H.

AU - Cheung, N. W.

AU - Brown, I. G.

AU - Godechot, X.

AU - Galvin, J. E.

AU - MacGill, R. A.

AU - Yu, K. M.

PY - 1991/4/2

Y1 - 1991/4/2

N2 - A metal vapor vacuum arc (MEVVA) ion source has been used to implant Pd into SiO2 substrates. The ion implanted area formed a seeding layer on which a Cu film was successfully plated through an electroless plating process. It was found that the required Pd dose for Cu plating to occur is on the order of 3×1015 cm-2 when the implantation was performed with a 20 kV extraction voltage. Taking advantage of the large pulsed ion current capability (up to 1 A) of the MEVVA ion source, the needed Pd dose for seeding was achieved in minutes. With direct Pd implantation, an intermediate activation step using PdCl2 solution can be eliminated. The Cu plating rate was not a sensitive function of temperature and no incubation period was found in our experiments. © 1991.

AB - A metal vapor vacuum arc (MEVVA) ion source has been used to implant Pd into SiO2 substrates. The ion implanted area formed a seeding layer on which a Cu film was successfully plated through an electroless plating process. It was found that the required Pd dose for Cu plating to occur is on the order of 3×1015 cm-2 when the implantation was performed with a 20 kV extraction voltage. Taking advantage of the large pulsed ion current capability (up to 1 A) of the MEVVA ion source, the needed Pd dose for seeding was achieved in minutes. With direct Pd implantation, an intermediate activation step using PdCl2 solution can be eliminated. The Cu plating rate was not a sensitive function of temperature and no incubation period was found in our experiments. © 1991.

UR - http://www.scopus.com/inward/record.url?scp=0041530241&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0041530241&origin=recordpage

U2 - 10.1016/0168-583X(91)96302-2

DO - 10.1016/0168-583X(91)96302-2

M3 - RGC 21 - Publication in refereed journal

SN - 0168-583X

VL - 55

SP - 893

EP - 897

JO - Nuclear Inst. and Methods in Physics Research, B

JF - Nuclear Inst. and Methods in Physics Research, B

IS - 1-4

ER -

Metal vapor vacuum arc ion implantation for seeding of electroless Cu plating

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