Metal silicide nanowires

L. J. Chen; W. W. Wu; H. C. Hsu; S. Y. Chen; Y. L. Chueh; L.-J. Chou; K. C. Lu; K. N. Tu

doi:10.1149/1.2783296

Metal silicide nanowires

L. J. Chen
, W. W. Wu
, H. C. Hsu
, S. Y. Chen
, Y. L. Chueh
, L.-J. Chou
, K. C. Lu
, K. N. Tu

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

4 Citations (Scopus)

Abstract

Recent progresses on the growth and characterization of metal silicide nanowires are highlighted. Four examples are given: 1. point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano NiSi/Si, 2. growth of high-density titanium silicide nanowires in a single direction on a silicon surface, 3. synthesis and characterization of metallic TaSi₂ nanowires and 4. self-assembled growth of NiSi₂ and α-FeSi₂ nanowires by nitride mediated epitaxy. © 2007 ECS - The Electrochemical Society

Original language	English
Title of host publication	Nanoscale One-Dimensional Electronic and Photonic Devices (NODEPD)
Editors	L. Chou
Publisher	Electrochemical Society, Inc.
Pages	3-6
ISBN (Print)	9781604238938
DOIs	https://doi.org/10.1149/1.2783296
Publication status	Published - 2007
Externally published	Yes
Event	212th ECS Meeting: Nanoscale One-Dimensional Electronic and Photonic Devices (NODEPD) - Hilton Washington Hotel, Washington, DC, United States Duration: 7 Oct 2007 → 12 Oct 2007 https://www.electrochem.org/212

Publication series

Name	ECS Transactions
Number	8
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	212th ECS Meeting: Nanoscale One-Dimensional Electronic and Photonic Devices (NODEPD)
Place	United States
City	Washington, DC
Period	7/10/07 → 12/10/07
Internet address	https://www.electrochem.org/212

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@inproceedings{b016f7bf40dd46c49ccf1ac1bf1b332c,

title = "Metal silicide nanowires",

abstract = "Recent progresses on the growth and characterization of metal silicide nanowires are highlighted. Four examples are given: 1. point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano NiSi/Si, 2. growth of high-density titanium silicide nanowires in a single direction on a silicon surface, 3. synthesis and characterization of metallic TaSi2 nanowires and 4. self-assembled growth of NiSi2 and α-FeSi2 nanowires by nitride mediated epitaxy. {\textcopyright} 2007 ECS - The Electrochemical Society",

author = "Chen, \{L. J.\} and Wu, \{W. W.\} and Hsu, \{H. C.\} and Chen, \{S. Y.\} and Chueh, \{Y. L.\} and L.-J. Chou and Lu, \{K. C.\} and Tu, \{K. N.\}",

year = "2007",

doi = "10.1149/1.2783296",

language = "English",

isbn = "9781604238938",

series = "ECS Transactions",

publisher = "Electrochemical Society, Inc.",

number = "8",

pages = "3--6",

editor = "L. Chou",

booktitle = "Nanoscale One-Dimensional Electronic and Photonic Devices (NODEPD)",

note = "212th ECS Meeting: Nanoscale One-Dimensional Electronic and Photonic Devices (NODEPD) ; Conference date: 07-10-2007 Through 12-10-2007",

url = "https://www.electrochem.org/212",

}

Chen, LJ, Wu, WW, Hsu, HC, Chen, SY, Chueh, YL, Chou, L-J, Lu, KC & Tu, KN 2007, Metal silicide nanowires. in L Chou (ed.), Nanoscale One-Dimensional Electronic and Photonic Devices (NODEPD). ECS Transactions, no. 8, vol. 11, Electrochemical Society, Inc., pp. 3-6, 212th ECS Meeting: Nanoscale One-Dimensional Electronic and Photonic Devices (NODEPD), Washington, DC, United States, 7/10/07. https://doi.org/10.1149/1.2783296

Metal silicide nanowires. / Chen, L. J.; Wu, W. W.; Hsu, H. C. et al.
Nanoscale One-Dimensional Electronic and Photonic Devices (NODEPD). ed. / L. Chou. Electrochemical Society, Inc., 2007. p. 3-6 (ECS Transactions; Vol. 11, No. 8).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Metal silicide nanowires

AU - Chen, L. J.

AU - Wu, W. W.

AU - Hsu, H. C.

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AU - Chueh, Y. L.

AU - Chou, L.-J.

AU - Lu, K. C.

AU - Tu, K. N.

PY - 2007

Y1 - 2007

N2 - Recent progresses on the growth and characterization of metal silicide nanowires are highlighted. Four examples are given: 1. point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano NiSi/Si, 2. growth of high-density titanium silicide nanowires in a single direction on a silicon surface, 3. synthesis and characterization of metallic TaSi2 nanowires and 4. self-assembled growth of NiSi2 and α-FeSi2 nanowires by nitride mediated epitaxy. © 2007 ECS - The Electrochemical Society

AB - Recent progresses on the growth and characterization of metal silicide nanowires are highlighted. Four examples are given: 1. point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano NiSi/Si, 2. growth of high-density titanium silicide nanowires in a single direction on a silicon surface, 3. synthesis and characterization of metallic TaSi2 nanowires and 4. self-assembled growth of NiSi2 and α-FeSi2 nanowires by nitride mediated epitaxy. © 2007 ECS - The Electrochemical Society

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-45749135429&origin=recordpage

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DO - 10.1149/1.2783296

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781604238938

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SP - 3

EP - 6

BT - Nanoscale One-Dimensional Electronic and Photonic Devices (NODEPD)

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PB - Electrochemical Society, Inc.

T2 - 212th ECS Meeting: Nanoscale One-Dimensional Electronic and Photonic Devices (NODEPD)

Y2 - 7 October 2007 through 12 October 2007

ER -

Metal silicide nanowires

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