Mechanoluminescence properties of Mn2+-doped BaZnOS phosphor

Lejing Li; Ka-Leung Wong; Pengfei Li; Mingying Peng

doi:10.1039/c6tc02760a

Mechanoluminescence properties of Mn²⁺-doped BaZnOS phosphor

Lejing Li, Ka-Leung Wong, Pengfei Li, Mingying Peng

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

74 Citations (Scopus)

Abstract

In this study, a novel Mn²⁺-doped wide band gap semiconductor, BaZnOS, demonstrates intense elastico-mechanoluminescence (EML) under pressure and friction, and the intensity of emission peaks is proportional to the applied compressive stress. Besides, orange-to-red EML emission peaks (586, 610 nm) were observed after application of different mechanical stimuli, which differs from the photoluminescence (PL) peak, which is fixed at 634 nm. The special phenomenon indicates that BaZnOS:Mn²⁺ could be employed as a stress sensor that not only records the stress magnitude and distribution, but also identifies the stress type. The novel variational EML property, originating from different mechanical stimuli, indicates a new view for exploiting PL and EML multicolor applications. © 2016 The Royal Society of Chemistry.

Original language	English
Pages (from-to)	8166-8170
Journal	Journal of Materials Chemistry C
Volume	4
Issue number	35
DOIs	https://doi.org/10.1039/c6tc02760a
Publication status	Published - 2016
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Funding

This work was financially supported by the National Natural Science Foundation of China (Grant No. 51322208 and 51672085), Guangdong Natural Science Foundation for Distinguished Young Scholars (Grant No. S20120011380), the Department of Education of Guangdong Province (Grant No. 2013gjhz0001), Fundamental Research Funds for the Central Universities, Key Program of Guangzhou Scientific Research Special Project (Grant No. 201607020009), Hundred, Thousand and Ten Thousand Leading Talent Project in Guangdong Program for Special Support of Eminent Professionals, Special Program of Science and Technology Innovation Cultivation for Undergraduate Students in Guangdong Province (Grant No. j2tw-K1160010).

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title = "Mechanoluminescence properties of Mn2+-doped BaZnOS phosphor",

abstract = "In this study, a novel Mn2+-doped wide band gap semiconductor, BaZnOS, demonstrates intense elastico-mechanoluminescence (EML) under pressure and friction, and the intensity of emission peaks is proportional to the applied compressive stress. Besides, orange-to-red EML emission peaks (586, 610 nm) were observed after application of different mechanical stimuli, which differs from the photoluminescence (PL) peak, which is fixed at 634 nm. The special phenomenon indicates that BaZnOS:Mn2+ could be employed as a stress sensor that not only records the stress magnitude and distribution, but also identifies the stress type. The novel variational EML property, originating from different mechanical stimuli, indicates a new view for exploiting PL and EML multicolor applications. {\textcopyright} 2016 The Royal Society of Chemistry.",

author = "Lejing Li and Ka-Leung Wong and Pengfei Li and Mingying Peng",

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T1 - Mechanoluminescence properties of Mn2+-doped BaZnOS phosphor

AU - Li, Lejing

AU - Wong, Ka-Leung

AU - Li, Pengfei

AU - Peng, Mingying

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2016

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N2 - In this study, a novel Mn2+-doped wide band gap semiconductor, BaZnOS, demonstrates intense elastico-mechanoluminescence (EML) under pressure and friction, and the intensity of emission peaks is proportional to the applied compressive stress. Besides, orange-to-red EML emission peaks (586, 610 nm) were observed after application of different mechanical stimuli, which differs from the photoluminescence (PL) peak, which is fixed at 634 nm. The special phenomenon indicates that BaZnOS:Mn2+ could be employed as a stress sensor that not only records the stress magnitude and distribution, but also identifies the stress type. The novel variational EML property, originating from different mechanical stimuli, indicates a new view for exploiting PL and EML multicolor applications. © 2016 The Royal Society of Chemistry.

AB - In this study, a novel Mn2+-doped wide band gap semiconductor, BaZnOS, demonstrates intense elastico-mechanoluminescence (EML) under pressure and friction, and the intensity of emission peaks is proportional to the applied compressive stress. Besides, orange-to-red EML emission peaks (586, 610 nm) were observed after application of different mechanical stimuli, which differs from the photoluminescence (PL) peak, which is fixed at 634 nm. The special phenomenon indicates that BaZnOS:Mn2+ could be employed as a stress sensor that not only records the stress magnitude and distribution, but also identifies the stress type. The novel variational EML property, originating from different mechanical stimuli, indicates a new view for exploiting PL and EML multicolor applications. © 2016 The Royal Society of Chemistry.

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DO - 10.1039/c6tc02760a

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