Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors

Peng Yang; Yudong Pang; Jiajia Zha; Haoxin Huang; Zhendong Jiang; Meng Zhang; Chaoliang Tan; Wugang Liao

doi:10.1109/TED.2024.3440962

Author(s)

Peng Yang
Yudong Pang
Jiajia Zha
Zhendong Jiang
Meng Zhang
Wugang Liao

Related Research Unit(s)

Department of Electrical Engineering

Detail(s)

Original language	English
Pages (from-to)	6417-6423
Journal / Publication	IEEE Transactions on Electron Devices
Volume	71
Issue number	10
Online published	4 Sept 2024
Publication status	Published - Oct 2024

Link(s)

DOI	DOI https://doi.org/10.1109/TED.2024.3440962 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-85205293023&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(824f8e07-c994-48a3-bb4a-ca2541e44e75).html

Abstract

This article utilizes low-frequency noise (LFN) measurements to evaluate the stability of tellurium (Te) field-effect transistor (FET). Our results show that LFN for Te FET on hexagonal boron nitride/silicon dioxide (h-BN/SiO₂) tracks the trends of flicker noise (1/f noise) and decreases with increasing overdrive voltages, which is ascribed to the change of dominant carriers and the fluctuation of surface trap density. Compared with Te FET on SiO₂, Te FET on h-BN/SiO₂ reaches a lower LFN. To further investigate the mechanism of current fluctuation, surface trap density N_st is extracted. The average value of N_st for Te FETs on h-BN/SiO₂ is smaller than that for Te FETs on SiO₂. It is concluded that the introduction of atomically flat h-BN dielectric decreases N_st, suggesting that Te FET on h-BN/SiO₂ presents higher immunity to LFN and provides a design thought for devices with high stability in the future. © 2024 IEEE.

Research Area(s)

Dielectric layer, hexagonal boron nitride (h-BN), low-frequency noise (LFN), surface trap density, Te nanobelts field-effect transistor (FET)

Citation Format(s)

[ RIS ] [ BibTeX ]

Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors. / Yang, Peng; Pang, Yudong; Zha, Jiajia et al.
In: IEEE Transactions on Electron Devices, Vol. 71, No. 10, 10.2024, p. 6417-6423.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Yang, P, Pang, Y, Zha, J, Huang, H, Jiang, Z, Zhang, M, Tan, C & Liao, W 2024, 'Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors', IEEE Transactions on Electron Devices, vol. 71, no. 10, pp. 6417-6423. https://doi.org/10.1109/TED.2024.3440962

Yang, P., Pang, Y., Zha, J., Huang, H., Jiang, Z., Zhang, M., Tan, C., & Liao, W. (2024). Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors. IEEE Transactions on Electron Devices, 71(10), 6417-6423. https://doi.org/10.1109/TED.2024.3440962

Yang P, Pang Y, Zha J, Huang H, Jiang Z, Zhang M et al. Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors. IEEE Transactions on Electron Devices. 2024 Oct;71(10):6417-6423. Epub 2024 Sept 4. doi: 10.1109/TED.2024.3440962

Yang, Peng ; Pang, Yudong ; Zha, Jiajia et al. / Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors. In: IEEE Transactions on Electron Devices. 2024 ; Vol. 71, No. 10. pp. 6417-6423.