Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors

Peng Yang; Yudong Pang; Jiajia Zha; Haoxin Huang; Zhendong Jiang; Meng Zhang; Chaoliang Tan; Wugang Liao

doi:10.1109/TED.2024.3440962

Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors

Peng Yang, Yudong Pang, Jiajia Zha, Haoxin Huang, Zhendong Jiang, Meng Zhang, Chaoliang Tan^*, Wugang Liao^*

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

3 Citations (Scopus)

Abstract

This article utilizes low-frequency noise (LFN) measurements to evaluate the stability of tellurium (Te) field-effect transistor (FET). Our results show that LFN for Te FET on hexagonal boron nitride/silicon dioxide (h-BN/SiO₂) tracks the trends of flicker noise (1/f noise) and decreases with increasing overdrive voltages, which is ascribed to the change of dominant carriers and the fluctuation of surface trap density. Compared with Te FET on SiO₂, Te FET on h-BN/SiO₂ reaches a lower LFN. To further investigate the mechanism of current fluctuation, surface trap density N_st is extracted. The average value of N_st for Te FETs on h-BN/SiO₂ is smaller than that for Te FETs on SiO₂. It is concluded that the introduction of atomically flat h-BN dielectric decreases N_st, suggesting that Te FET on h-BN/SiO₂ presents higher immunity to LFN and provides a design thought for devices with high stability in the future. © 2024 IEEE.

Original language	English
Pages (from-to)	6417-6423
Journal	IEEE Transactions on Electron Devices
Volume	71
Issue number	10
Online published	4 Sept 2024
DOIs	https://doi.org/10.1109/TED.2024.3440962
Publication status	Published - Oct 2024

Funding

This work was supported in part by Guangdong Basic and Applied Basic Research Foundation under Grant 2023A1515010693, in part by Shenzhen University 2035 Program for Excellent Research under Grant 2023C008, in part by Shenzhen Science and Technology Program under Grant ZDSYS20220527171402005, in part by Shenzhen Strategic Emerging Industry Support Plan under Grant F-2023-Z99-509043, and in part by the National Natural Science Foundation of China under Grant 61904110. The work of Peng Yang was supported in part by Shenzhen Science and Technology Program under Grant 20231128102926002 and in part by Pingshan District Innovation Platform Project of Shenzhen Hi-Tech Zone Development Special Plan in 2022 under Grant 29853M-KCJ-2023-002-01. The work of Chaoliang Tan was supported in part by the National Natural Science Foundation of China for Excellent young Scientist Fund under Grant 52122002 and in part by the General Research Fund (GRF) from the Research Grant Council of Hong Kong under Grant 11200122.

Research Keywords

Dielectric layer
hexagonal boron nitride (h-BN)
low-frequency noise (LFN)
surface trap density
Te nanobelts field-effect transistor (FET)

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10.1109/TED.2024.3440962

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title = "Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors",

abstract = "This article utilizes low-frequency noise (LFN) measurements to evaluate the stability of tellurium (Te) field-effect transistor (FET). Our results show that LFN for Te FET on hexagonal boron nitride/silicon dioxide (h-BN/SiO2) tracks the trends of flicker noise (1/f noise) and decreases with increasing overdrive voltages, which is ascribed to the change of dominant carriers and the fluctuation of surface trap density. Compared with Te FET on SiO2, Te FET on h-BN/SiO2 reaches a lower LFN. To further investigate the mechanism of current fluctuation, surface trap density Nst is extracted. The average value of Nst for Te FETs on h-BN/SiO2 is smaller than that for Te FETs on SiO2. It is concluded that the introduction of atomically flat h-BN dielectric decreases Nst, suggesting that Te FET on h-BN/SiO2 presents higher immunity to LFN and provides a design thought for devices with high stability in the future. {\textcopyright} 2024 IEEE.",

keywords = "Dielectric layer, hexagonal boron nitride (h-BN), low-frequency noise (LFN), surface trap density, Te nanobelts field-effect transistor (FET)",

author = "Peng Yang and Yudong Pang and Jiajia Zha and Haoxin Huang and Zhendong Jiang and Meng Zhang and Chaoliang Tan and Wugang Liao",

year = "2024",

month = oct,

doi = "10.1109/TED.2024.3440962",

language = "English",

volume = "71",

pages = "6417--6423",

journal = "IEEE Transactions on Electron Devices",

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T1 - Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors

AU - Yang, Peng

AU - Pang, Yudong

AU - Zha, Jiajia

AU - Huang, Haoxin

AU - Jiang, Zhendong

AU - Zhang, Meng

AU - Tan, Chaoliang

AU - Liao, Wugang

PY - 2024/10

Y1 - 2024/10

N2 - This article utilizes low-frequency noise (LFN) measurements to evaluate the stability of tellurium (Te) field-effect transistor (FET). Our results show that LFN for Te FET on hexagonal boron nitride/silicon dioxide (h-BN/SiO2) tracks the trends of flicker noise (1/f noise) and decreases with increasing overdrive voltages, which is ascribed to the change of dominant carriers and the fluctuation of surface trap density. Compared with Te FET on SiO2, Te FET on h-BN/SiO2 reaches a lower LFN. To further investigate the mechanism of current fluctuation, surface trap density Nst is extracted. The average value of Nst for Te FETs on h-BN/SiO2 is smaller than that for Te FETs on SiO2. It is concluded that the introduction of atomically flat h-BN dielectric decreases Nst, suggesting that Te FET on h-BN/SiO2 presents higher immunity to LFN and provides a design thought for devices with high stability in the future. © 2024 IEEE.

AB - This article utilizes low-frequency noise (LFN) measurements to evaluate the stability of tellurium (Te) field-effect transistor (FET). Our results show that LFN for Te FET on hexagonal boron nitride/silicon dioxide (h-BN/SiO2) tracks the trends of flicker noise (1/f noise) and decreases with increasing overdrive voltages, which is ascribed to the change of dominant carriers and the fluctuation of surface trap density. Compared with Te FET on SiO2, Te FET on h-BN/SiO2 reaches a lower LFN. To further investigate the mechanism of current fluctuation, surface trap density Nst is extracted. The average value of Nst for Te FETs on h-BN/SiO2 is smaller than that for Te FETs on SiO2. It is concluded that the introduction of atomically flat h-BN dielectric decreases Nst, suggesting that Te FET on h-BN/SiO2 presents higher immunity to LFN and provides a design thought for devices with high stability in the future. © 2024 IEEE.

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KW - hexagonal boron nitride (h-BN)

KW - low-frequency noise (LFN)

KW - surface trap density

KW - Te nanobelts field-effect transistor (FET)

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DO - 10.1109/TED.2024.3440962

M3 - RGC 21 - Publication in refereed journal

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EP - 6423

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -

Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors

Abstract

Funding

Research Keywords

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GRF: Growth of High-Quality Tellurium Thin Films via Substrate Engineering for High-Performance p-Type Field-Effect Transistors and Circuits

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Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors

Abstract

Funding

Research Keywords

RGC Funding Information

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Projects

GRF: Growth of High-Quality Tellurium Thin Films via Substrate Engineering for High-Performance p-Type Field-Effect Transistors and Circuits

Cite this