Mechanism of stress relaxation in Ge nanocrystals embedded in Si O2

I. D. Sharp; D. O. Yi; Q. Xu; C. Y. Liao; J. W. Beeman; Z. Liliental-Weber; K. M. Yu; D. N. Zakharov; J. W. Ager; D. C. Chrzan; E. E. Haller

doi:10.1063/1.1856132

Author(s)

I. D. Sharp
D. O. Yi
Q. Xu
C. Y. Liao
J. W. Beeman
Z. Liliental-Weber
D. N. Zakharov
J. W. Ager
D. C. Chrzan
E. E. Haller

Detail(s)

Original language	English
Article number	63107
Pages (from-to)	1-3
Journal / Publication	Applied Physics Letters
Volume	86
Issue number	6
Publication status	Published - 7 Feb 2005
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.1856132 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-20844457937&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(5ef26ab1-13f8-41b7-a962-b5a8f9f1f520).html

Abstract

Ion-beam-synthesized Ge74 nanocrystals embedded in an amorphous silica matrix exhibit large compressive stresses in the as-grown state. The compressive stress is determined quantitatively by evaluating the Raman line shift referenced to the line position of free-standing nanocrystals. Postgrowth thermal treatments lead to stress reduction. The stress relief process is shown to be governed by the diffusive flux of matrix atoms away from the local nanocrystal growth region. A theoretical model that quantitatively describes this process is presented. © 2005 American Institute of Physics.

Citation Format(s)

[ RIS ] [ BibTeX ]

Mechanism of stress relaxation in Ge nanocrystals embedded in Si O2. / Sharp, I. D.; Yi, D. O.; Xu, Q. et al.

In: Applied Physics Letters, Vol. 86, No. 6, 63107, 07.02.2005, p. 1-3.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Sharp, ID, Yi, DO, Xu, Q, Liao, CY, Beeman, JW, Liliental-Weber, Z, Yu, KM, Zakharov, DN, Ager, JW, Chrzan, DC & Haller, EE 2005, 'Mechanism of stress relaxation in Ge nanocrystals embedded in Si O2', Applied Physics Letters, vol. 86, no. 6, 63107, pp. 1-3. https://doi.org/10.1063/1.1856132

Sharp, I. D., Yi, D. O., Xu, Q., Liao, C. Y., Beeman, J. W., Liliental-Weber, Z., Yu, K. M., Zakharov, D. N., Ager, J. W., Chrzan, D. C., & Haller, E. E. (2005). Mechanism of stress relaxation in Ge nanocrystals embedded in Si O2. Applied Physics Letters, 86(6), 1-3. [63107]. https://doi.org/10.1063/1.1856132

Sharp ID, Yi DO, Xu Q, Liao CY, Beeman JW, Liliental-Weber Z et al. Mechanism of stress relaxation in Ge nanocrystals embedded in Si O2. Applied Physics Letters. 2005 Feb 7;86(6):1-3. 63107. doi: 10.1063/1.1856132

Sharp, I. D. ; Yi, D. O. ; Xu, Q. et al. / Mechanism of stress relaxation in Ge nanocrystals embedded in Si O2. In: Applied Physics Letters. 2005 ; Vol. 86, No. 6. pp. 1-3.