Mechanism of polarization fatigue in BiFeO3: The role of Schottky barrier

Yang Zhou; Xi Zou; Lu You; Rui Guo; Zhi Shiuh Lim; Lang Chen; Guoliang Yuan; Junling Wang

doi:10.1063/1.4861231

Mechanism of polarization fatigue in BiFeO₃: The role of Schottky barrier

Yang Zhou, Xi Zou, Lu You, Rui Guo, Zhi Shiuh Lim, Lang Chen, Guoliang Yuan, Junling Wang

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

28 Citations (Scopus)

Abstract

By using piezoelectric force microscopy and scanning Kelvin probe microscopy, we have investigated the domain evolution and space charge distribution in planar BiFeO₃ capacitors with different electrodes. It is observed that charge injection at the film/electrode interface leads to domain pinning and polarization fatigue in BiFeO₃. Furthermore, the Schottky barrier at the interface is crucial for the charge injection/ accumulation process. Lowering the Schottky barrier by using low work function metals as the electrodes can also improve the fatigue property of the device, similar to what oxide electrodes can achieve. © 2014 AIP Publishing LLC.

Original language	English
Article number	012903
Journal	Applied Physics Letters
Volume	104
Issue number	1
DOIs	https://doi.org/10.1063/1.4861231
Publication status	Published - 6 Jan 2014
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Mechanism of polarization fatigue in BiFeO3: The role of Schottky barrier",

abstract = "By using piezoelectric force microscopy and scanning Kelvin probe microscopy, we have investigated the domain evolution and space charge distribution in planar BiFeO3 capacitors with different electrodes. It is observed that charge injection at the film/electrode interface leads to domain pinning and polarization fatigue in BiFeO3. Furthermore, the Schottky barrier at the interface is crucial for the charge injection/ accumulation process. Lowering the Schottky barrier by using low work function metals as the electrodes can also improve the fatigue property of the device, similar to what oxide electrodes can achieve. {\textcopyright} 2014 AIP Publishing LLC.",

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AU - Zhou, Yang

AU - Zou, Xi

AU - You, Lu

AU - Guo, Rui

AU - Shiuh Lim, Zhi

AU - Chen, Lang

AU - Yuan, Guoliang

AU - Wang, Junling

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2014/1/6

Y1 - 2014/1/6

N2 - By using piezoelectric force microscopy and scanning Kelvin probe microscopy, we have investigated the domain evolution and space charge distribution in planar BiFeO3 capacitors with different electrodes. It is observed that charge injection at the film/electrode interface leads to domain pinning and polarization fatigue in BiFeO3. Furthermore, the Schottky barrier at the interface is crucial for the charge injection/ accumulation process. Lowering the Schottky barrier by using low work function metals as the electrodes can also improve the fatigue property of the device, similar to what oxide electrodes can achieve. © 2014 AIP Publishing LLC.

AB - By using piezoelectric force microscopy and scanning Kelvin probe microscopy, we have investigated the domain evolution and space charge distribution in planar BiFeO3 capacitors with different electrodes. It is observed that charge injection at the film/electrode interface leads to domain pinning and polarization fatigue in BiFeO3. Furthermore, the Schottky barrier at the interface is crucial for the charge injection/ accumulation process. Lowering the Schottky barrier by using low work function metals as the electrodes can also improve the fatigue property of the device, similar to what oxide electrodes can achieve. © 2014 AIP Publishing LLC.

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