Mechanism of fatigue in micron-scale films of polycrystalline silicon for microelectromechanical systems

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

100 Scopus Citations
View graph of relations



Original languageEnglish
Pages (from-to)1532-1534
Journal / PublicationApplied Physics Letters
Issue number9
Online published25 Feb 2002
Publication statusPublished - 4 Mar 2002
Externally publishedYes


Reported nearly a decade ago, cyclic fatigue failure in silicon thin films has remained a mystery. Silicon does not display the room-temperature plasticity or extrinsic toughening mechanisms necessary to cause fatigue in either ductile (e.g., metals) or brittle (e.g., ceramics and ordered intermetallics) materials. This letter presents experimental evidence for the cyclic fatigue of silicon via a conceptually different mechanism termed reaction-layer fatigue. Based on mechanical testing, electron microscopy, and self-assembled monolayers, we present direct observation of fatigue-crack initiation in polycrystalline silicon, the mechanism of crack initiation, and a method for altering fatigue damage accumulation. © 2002 American Institute of Physics.