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Mechanism of Cs2 CO3 as an n-type dopant in organic electron-transport film

  • Y. Cai
  • , H. X. Wei
  • , J. Li
  • , Q. Y. Bao
  • , X. Zhao
  • , S. T. Lee
  • , Y. Q. Li
  • , J. X. Tang

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

The electronic structures of cesium carbonate (Cs2 CO 3) doped 4,7-diphenyl-1,10-phenanthroline (BPhen) films with various doping concentration are characterized by in situ ultraviolet and x-ray photoelectron spectroscopies, in an attempt to understand the mechanism of electron-transport enhancement in Cs2 CO3 -doped organic electron-transport layer for organic optoelectronic devices. The n-type electrical doping effect is evidenced by the Fermi level shift in the Cs 2 CO3 -doped BPhen films toward unoccupied molecular states with increasing doping concentration, leading to increase in electron concentration in the electron-transport layer and reduction in electron injection barrier height. These findings originate from energetically favorable electron transfer from Cs2 CO3 to BPhen. © 2011 American Institute of Physics.
Original languageEnglish
Article number113304
JournalApplied Physics Letters
Volume98
Issue number11
DOIs
Publication statusPublished - 14 Mar 2011

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