Abstract
The electronic structures of cesium carbonate (Cs2 CO 3) doped 4,7-diphenyl-1,10-phenanthroline (BPhen) films with various doping concentration are characterized by in situ ultraviolet and x-ray photoelectron spectroscopies, in an attempt to understand the mechanism of electron-transport enhancement in Cs2 CO3 -doped organic electron-transport layer for organic optoelectronic devices. The n-type electrical doping effect is evidenced by the Fermi level shift in the Cs 2 CO3 -doped BPhen films toward unoccupied molecular states with increasing doping concentration, leading to increase in electron concentration in the electron-transport layer and reduction in electron injection barrier height. These findings originate from energetically favorable electron transfer from Cs2 CO3 to BPhen. © 2011 American Institute of Physics.
| Original language | English |
|---|---|
| Article number | 113304 |
| Journal | Applied Physics Letters |
| Volume | 98 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 14 Mar 2011 |
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