Mechanism of apatite formation on hydrogen plasma-implanted single-crystal silicon

Hydrogen is implanted into single-crystal silicon wafers using plasma ion immersion implantation to improve the surface bioactivity and the mechanism of apatite formation is investigated. Our micro-Raman and transmission electron microscopy results reveal the presence of a disordered silicon surface containing Si-H bonds after hydrogen implantation. When the sample is immersed in a simulated body fluid, the Si-H bonds on the silicon wafer initially react with water to produce a negatively charged surface containing the functional group (≡Si-Ō) that subsequently induces the formation of apatite. A good understanding of the formation mechanism of apatite on hydrogen implanted silicon is not only important from the viewpoint of biophysics but also vital to the actual use of silicon-based microchips and MEMS inside a human body. © 2004 American Institute of Physics.