Mechanism for Cu void defect on various electroplated film conditions

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • M. Y. Cheng
  • Y. L. Wang
  • S. C. Chang
  • Y. Y. Wang
  • C. C. Wan

Detail(s)

Original languageEnglish
Pages (from-to)56-59
Journal / PublicationThin Solid Films
Volume498
Issue number1-2
Publication statusPublished - 1 Mar 2006
Externally publishedYes

Conference

TitleProceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD
Period12 - 14 November 2004

Abstract

This study observes that copper (Cu) films deposited by high current densities or in an aged electrolyte easily generate void defects after chemical mechanical polishing (CMP). The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the formation of void defects. Furthermore, pulse-reverse waveform plating following direct current plating is used for the deposition of partial Cu films that will be exposed after Cu CMP. This new scheme produces a void-less Cu surface after CMP. © 2005 Elsevier B.V. All rights reserved.

Research Area(s)

  • Copper plating, Copper void, Direct current plating, Electromigration resistance

Bibliographic Note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to lbscholars@cityu.edu.hk.

Citation Format(s)

Mechanism for Cu void defect on various electroplated film conditions. / Feng, H. P.; Cheng, M. Y.; Wang, Y. L.; Chang, S. C.; Wang, Y. Y.; Wan, C. C.

In: Thin Solid Films, Vol. 498, No. 1-2, 01.03.2006, p. 56-59.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review