Mechanism for Cu void defect on various electroplated film conditions

H. P. Feng; M. Y. Cheng; Y. L. Wang; S. C. Chang; Y. Y. Wang; C. C. Wan

doi:10.1016/j.tsf.2005.07.062

Mechanism for Cu void defect on various electroplated film conditions

H. P. Feng
, M. Y. Cheng
, Y. L. Wang
, S. C. Chang
, Y. Y. Wang
, C. C. Wan

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

23 Citations (Scopus)

Abstract

This study observes that copper (Cu) films deposited by high current densities or in an aged electrolyte easily generate void defects after chemical mechanical polishing (CMP). The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the formation of void defects. Furthermore, pulse-reverse waveform plating following direct current plating is used for the deposition of partial Cu films that will be exposed after Cu CMP. This new scheme produces a void-less Cu surface after CMP. © 2005 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	56-59
Journal	Thin Solid Films
Volume	498
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.07.062
Publication status	Published - 1 Mar 2006
Externally published	Yes
Event	Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD - Duration: 12 Nov 2004 → 14 Nov 2004

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

Copper plating
Copper void
Direct current plating
Electromigration resistance

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title = "Mechanism for Cu void defect on various electroplated film conditions",

abstract = "This study observes that copper (Cu) films deposited by high current densities or in an aged electrolyte easily generate void defects after chemical mechanical polishing (CMP). The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the formation of void defects. Furthermore, pulse-reverse waveform plating following direct current plating is used for the deposition of partial Cu films that will be exposed after Cu CMP. This new scheme produces a void-less Cu surface after CMP. {\textcopyright} 2005 Elsevier B.V. All rights reserved.",

keywords = "Copper plating, Copper void, Direct current plating, Electromigration resistance",

author = "Feng, \{H. P.\} and Cheng, \{M. Y.\} and Wang, \{Y. L.\} and Chang, \{S. C.\} and Wang, \{Y. Y.\} and Wan, \{C. C.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].; Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD ; Conference date: 12-11-2004 Through 14-11-2004",

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month = mar,

day = "1",

doi = "10.1016/j.tsf.2005.07.062",

language = "English",

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journal = "Thin Solid Films",

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TY - JOUR

T1 - Mechanism for Cu void defect on various electroplated film conditions

AU - Feng, H. P.

AU - Cheng, M. Y.

AU - Wang, Y. L.

AU - Chang, S. C.

AU - Wang, Y. Y.

AU - Wan, C. C.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2006/3/1

Y1 - 2006/3/1

N2 - This study observes that copper (Cu) films deposited by high current densities or in an aged electrolyte easily generate void defects after chemical mechanical polishing (CMP). The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the formation of void defects. Furthermore, pulse-reverse waveform plating following direct current plating is used for the deposition of partial Cu films that will be exposed after Cu CMP. This new scheme produces a void-less Cu surface after CMP. © 2005 Elsevier B.V. All rights reserved.

AB - This study observes that copper (Cu) films deposited by high current densities or in an aged electrolyte easily generate void defects after chemical mechanical polishing (CMP). The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the formation of void defects. Furthermore, pulse-reverse waveform plating following direct current plating is used for the deposition of partial Cu films that will be exposed after Cu CMP. This new scheme produces a void-less Cu surface after CMP. © 2005 Elsevier B.V. All rights reserved.

KW - Copper plating

KW - Copper void

KW - Direct current plating

KW - Electromigration resistance

UR - https://www.scopus.com/pages/publications/30944463813

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-30944463813&origin=recordpage

U2 - 10.1016/j.tsf.2005.07.062

DO - 10.1016/j.tsf.2005.07.062

M3 - RGC 21 - Publication in refereed journal

SN - 0040-6090

VL - 498

SP - 56

EP - 59

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD

Y2 - 12 November 2004 through 14 November 2004

ER -

Mechanism for Cu void defect on various electroplated film conditions

Abstract

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Research Keywords

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