MBE-grown high κ gate dielectrics of HfO 2 and (Hf-Al)O 2 for Si and III-V semiconductors nano-electronics

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • W. C. Lee
  • Y. J. Lee
  • Y. D. Wu
  • P. Chang
  • Y. L. Huang
  • Y. L. Hsu
  • J. P. Mannaerts
  • R. L. Lo
  • S. Maikap
  • L. S. Lee
  • W. Y. Hsieh
  • M. J. Tsai
  • S. Y. Lin
  • T. Gustffson
  • M. Hong
  • J. Kwo

Detail(s)

Original languageEnglish
Pages (from-to)619-623
Journal / PublicationJournal of Crystal Growth
Volume278
Issue number1-4
Online published10 Feb 2005
Publication statusPublished - 1 May 2005
Externally publishedYes

Conference

Title13th International Conference on Molecular Beam Epitaxy
Period22 - 27 August 2004

Abstract

The MBE growth technique is employed to the intensively studied high κ gate dielectrics HfO 2 (κ=20) and its alloy (Hf-Al)O 2 in replacing conventional SiO 2 for nano-CMOS applications. Typical 4.9 nm thick HfO 2 films showed low leakage current density of ∼0.4 A/cm 2 at 1 V, a dielectric constant κ of 20.7 and an EOT of 0.9 nm. Minor frequency dispersion is observed at C-V curves and is removed by an improved two-frequency method. An epitaxial order of (1 0 0) cubic HfO 2 oxide is observed for the depositions on GaAs(1 0 0) at temperatures over 230 °C.  

Research Area(s)

  • B1. High κ dielectrics, B2. III-V semiconductor, B2. Nano electronics, B2. Si, B3. MOSFET

Citation Format(s)

MBE-grown high κ gate dielectrics of HfO 2 and (Hf-Al)O 2 for Si and III-V semiconductors nano-electronics. / Lee, W. C.; Lee, Y. J.; Wu, Y. D.; Chang, P.; Huang, Y. L.; Hsu, Y. L.; Mannaerts, J. P.; Lo, R. L.; Chen, F. R.; Maikap, S.; Lee, L. S.; Hsieh, W. Y.; Tsai, M. J.; Lin, S. Y.; Gustffson, T.; Hong, M.; Kwo, J.

In: Journal of Crystal Growth, Vol. 278, No. 1-4, 01.05.2005, p. 619-623.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review