MBE-grown high κ gate dielectrics of HfO 2 and (Hf-Al)O 2 for Si and III-V semiconductors nano-electronics

W. C. Lee; Y. J. Lee; Y. D. Wu; P. Chang; Y. L. Huang; Y. L. Hsu; J. P. Mannaerts; R. L. Lo; F. R. Chen; S. Maikap; L. S. Lee; W. Y. Hsieh; M. J. Tsai; S. Y. Lin; T. Gustffson; M. Hong; J. Kwo

doi:10.1016/j.jcrysgro.2004.12.127

Author(s)

W. C. Lee
Y. J. Lee
Y. D. Wu
P. Chang
Y. L. Huang
Y. L. Hsu
J. P. Mannaerts
R. L. Lo
S. Maikap
L. S. Lee
W. Y. Hsieh
M. J. Tsai
S. Y. Lin
T. Gustffson
M. Hong
J. Kwo

Detail(s)

Original language	English
Pages (from-to)	619-623
Journal / Publication	Journal of Crystal Growth
Volume	278
Issue number	1-4
Online published	10 Feb 2005
Publication status	Published - 1 May 2005
Externally published	Yes

Conference

Title	13th International Conference on Molecular Beam Epitaxy
Period	22 - 27 August 2004

Link(s)

DOI	DOI https://doi.org/10.1016/j.jcrysgro.2004.12.127 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-21044441945&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(3fd24b05-0bd4-41f3-a816-2a385cbe5b23).html

Abstract

The MBE growth technique is employed to the intensively studied high κ gate dielectrics HfO ₂ (κ=20) and its alloy (Hf-Al)O ₂ in replacing conventional SiO ₂ for nano-CMOS applications. Typical 4.9 nm thick HfO ₂ films showed low leakage current density of ∼0.4 A/cm ² at 1 V, a dielectric constant κ of 20.7 and an EOT of 0.9 nm. Minor frequency dispersion is observed at C-V curves and is removed by an improved two-frequency method. An epitaxial order of (1 0 0) cubic HfO ₂ oxide is observed for the depositions on GaAs(1 0 0) at temperatures over 230 °C.

Research Area(s)

B1. High κ dielectrics, B2. III-V semiconductor, B2. Nano electronics, B2. Si, B3. MOSFET

Citation Format(s)

[ RIS ] [ BibTeX ]

MBE-grown high κ gate dielectrics of HfO ₂ and (Hf-Al)O ₂ for Si and III-V semiconductors nano-electronics. / Lee, W. C.; Lee, Y. J.; Wu, Y. D. et al.
In: Journal of Crystal Growth, Vol. 278, No. 1-4, 01.05.2005, p. 619-623.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Lee, WC, Lee, YJ, Wu, YD, Chang, P, Huang, YL, Hsu, YL, Mannaerts, JP, Lo, RL, Chen, FR, Maikap, S, Lee, LS, Hsieh, WY, Tsai, MJ, Lin, SY, Gustffson, T, Hong, M & Kwo, J 2005, 'MBE-grown high κ gate dielectrics of HfO ₂ and (Hf-Al)O ₂ for Si and III-V semiconductors nano-electronics', Journal of Crystal Growth, vol. 278, no. 1-4, pp. 619-623. https://doi.org/10.1016/j.jcrysgro.2004.12.127

Lee, W. C., Lee, Y. J., Wu, Y. D., Chang, P., Huang, Y. L., Hsu, Y. L., Mannaerts, J. P., Lo, R. L., Chen, F. R., Maikap, S., Lee, L. S., Hsieh, W. Y., Tsai, M. J., Lin, S. Y., Gustffson, T., Hong, M., & Kwo, J. (2005). MBE-grown high κ gate dielectrics of HfO ₂ and (Hf-Al)O ₂ for Si and III-V semiconductors nano-electronics. Journal of Crystal Growth, 278(1-4), 619-623. https://doi.org/10.1016/j.jcrysgro.2004.12.127

Lee WC, Lee YJ, Wu YD, Chang P, Huang YL, Hsu YL et al. MBE-grown high κ gate dielectrics of HfO ₂ and (Hf-Al)O ₂ for Si and III-V semiconductors nano-electronics. Journal of Crystal Growth. 2005 May 1;278(1-4):619-623. Epub 2005 Feb 10. doi: 10.1016/j.jcrysgro.2004.12.127

Lee, W. C. ; Lee, Y. J. ; Wu, Y. D. et al. / MBE-grown high κ gate dielectrics of HfO ₂ and (Hf-Al)O ₂ for Si and III-V semiconductors nano-electronics. In: Journal of Crystal Growth. 2005 ; Vol. 278, No. 1-4. pp. 619-623.