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Materials can be strengthened by nanoscale stacking faults

  • J. Wang
  • , Y. G. Shen*
  • , F. Song
  • , F. J. Ke
  • , Y. L. Bai
  • , C. Lu*
  • *Corresponding author for this work

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Abstract

    In contrast to the strength of single crystals, stacking faults (SFs) are usually an unfavorable factor that weakens materials. Using molecular-dynamics simulations, we find that parallel-spaced SFs can dramatically enhance the strength of zinc-blende SiC nanorods, which is even beyond that of their single-crystal counterparts. Strengthening is achieved by restricting dislocation activities between nanoscale neighboring SFs and its overall upward trend is dominated by the volume fraction of SFs. The similar strengthening mechanism is also found in face-centered-cubic metals and their alloys. It is more promising than the traditional methods of decreasing nanoscale grains or twins due to the inverse Hall-Petch effect. This study sheds light on the structural design of nanomaterials with high strength.
    Original languageEnglish
    Article number36002
    JournalEPL
    Volume110
    Issue number3
    DOIs
    Publication statusPublished - 1 May 2015

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