Marching-based wear-leveling for PCM-based storage systems

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

24 Scopus Citations
View graph of relations

Author(s)

  • Hung-Sheng Chang
  • Yuan-Hao Chang
  • Pi-Cheng Hsiu
  • Tei-Wei Kuo
  • Hsiang-Pang Li

Detail(s)

Original languageEnglish
Article number25
Journal / PublicationACM Transactions on Design Automation of Electronic Systems
Volume20
Issue number2
Publication statusPublished - Feb 2015
Externally publishedYes

Abstract

Improving the performance of storage systems without losing the reliability and sanity/integrity of file systems is a major issue in storage system designs. In contrast to existing storage architectures, we consider a PCM-based storage architecture to enhance the reliability of storage systems. In PCM-based storage systems, the major challenge falls on how to prevent the frequently updated (meta)data from wearing out their residing PCM cells without excessively searching and moving metadata around the PCM space and without extensively updating the index structures of file systems. In this work, we propose an adaptive wearleveling mechanism to prevent any PCM cell from being worn out prematurely by selecting appropriate data for swapping with constant search/sort cost. Meanwhile, the concept of indirect pointers is designed in the proposed mechanism to swap data without any modification to the file system's indexes. Experiments were conducted based on well-known benchmarks and realistic workloads to evaluate the effectiveness of the proposed design, for which the results are encouraging.

Research Area(s)

  • Metadata, Phase-change memory, Storage system, Wear leveling

Citation Format(s)

Marching-based wear-leveling for PCM-based storage systems. / Chang, Hung-Sheng; Chang, Yuan-Hao; Hsiu, Pi-Cheng; Kuo, Tei-Wei; Li, Hsiang-Pang.

In: ACM Transactions on Design Automation of Electronic Systems, Vol. 20, No. 2, 25, 02.2015.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review