Manipulating the Resistive Switching in Epitaxial SrCoO2.5 Thin-Film-Based Memristors by Strain Engineering

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Xuepeng Xiang
  • Jingjing Rao
  • Chaesung Lim
  • Qicheng Huang
  • Zhen Fan
  • Jeong Woo Han
  • Yan Chen

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)2729–2738
Journal / PublicationACS Applied Electronic Materials
Volume4
Issue number6
Online published6 Jun 2022
Publication statusPublished - 28 Jun 2022

Abstract

Diverse synaptic and neuronal functionalities often require different switching dynamics for memristors. Here, we demonstrate an effective approach to modulating the switching dynamics in epitaxial thin-film-based memristors by using strain engineering. We apply 0 and -2.74% compressive strains to the brownmillerite SrCoO2.5 (BM-SCO) thin films by epitaxially growing them on (001)-oriented SrTiO3 (STO) and LaAlO3 (LAO) substrates, with Au and La0.7Sr0.3MnO3 (LSM) acting as top and bottom electrodes, respectively. When applying multiple DC voltage sweeps, the Au/BM-SCO/LSM/LAO memristor with compressive strain displays small yet narrowly distributed ON/OFF ratios (averaged at ∼3.5 with a cycle-to-cycle fluctuation of 17%), while the Au/BM-SCO/LSM/STO memristor with zero strain exhibits larger ON/OFF ratios distributed in a wider range (averaged at ∼15.5 with a cycle-to-cycle fluctuation of ∼33%). In the retention tests, the Au/BM-SCO/LSM/LAO memristor exhibits relatively stable high and low resistance states (HRSs and LRSs, respectively). By contrast, for the Au/BM-SCO/LSM/STO memristor, while the HRS remains stable, the LRS relaxes first and eventually converts to a stable intermediate state. Such significant differences in ON/OFF ratio and retention between the two memristors may be associated with the epitaxial strain-mediated oxygen vacancy generation and migration, which effectively modulated the filament growth and rupture dynamics. Therefore, strain engineering represents a rational route for modulating memristor performance for various neuromorphic applications.

Research Area(s)

  • brownmillerite, memristor, oxygen vacancy, SrCoO2.5 thin films, strain

Citation Format(s)

Manipulating the Resistive Switching in Epitaxial SrCoO2.5 Thin-Film-Based Memristors by Strain Engineering. / Xiang, Xuepeng; Rao, Jingjing; Lim, Chaesung; Huang, Qicheng; Zhao, Shijun; Fan, Zhen; Han, Jeong Woo; Chen, Yan.

In: ACS Applied Electronic Materials, Vol. 4, No. 6, 28.06.2022, p. 2729–2738.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review