Magneto-transport study of top- and back-gated LaAlO3/SrTiO3 heterostructures

W. Liu; S. Gariglio; A. Fête; D. Li; M. Boselli; D. Stornaiuolo; J.-M. Triscone

doi:10.1063/1.4921068

Magneto-transport study of top- and back-gated LaAlO₃/SrTiO₃ heterostructures

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Overview

33 Scopus Citations

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Author(s)

W. Liu
S. Gariglio
A. Fête
M. Boselli
D. Stornaiuolo
J.-M. Triscone

Detail(s)

Original language	English
Article number	062805
Journal / Publication	APL Materials
Volume	3
Issue number	6
Online published	13 May 2015
Publication status	Published - Jun 2015
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.4921068 Final Published version
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Attachment(s)	Documents 61538356.pdf Final Published version, 3.1 MB, PDF Publisher's Copyright Statement This full text is made available under CC-BY 3.0. https://creativecommons.org/licenses/by/3.0/
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-85005943259&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(47ccd76c-7153-4994-a060-b37fba109c10).html

Abstract

We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO₃/SrTiO₃ heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the back gate strongly modifies the electron mobility while the top gate mainly varies the carrier density. The evolution of the spin-orbit interaction is also followed as a function of top and back gating.