Magneto-transport study of top- and back-gated LaAlO3/SrTiO3 heterostructures

W. Liu; S. Gariglio; A. Fête; D. Li; M. Boselli; D. Stornaiuolo; J.-M. Triscone

doi:10.1063/1.4921068

Magneto-transport study of top- and back-gated LaAlO₃/SrTiO₃ heterostructures

W. Liu^*, S. Gariglio, A. Fête, D. Li, M. Boselli, D. Stornaiuolo, J.-M. Triscone

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Abstract

We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO₃/SrTiO₃ heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the back gate strongly modifies the electron mobility while the top gate mainly varies the carrier density. The evolution of the spin-orbit interaction is also followed as a function of top and back gating.

Original language	English
Article number	062805
Journal	APL Materials
Volume	3
Issue number	6
Online published	13 May 2015
DOIs	https://doi.org/10.1063/1.4921068
Publication status	Published - Jun 2015
Externally published	Yes

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This full text is made available under CC-BY 3.0. https://creativecommons.org/licenses/by/3.0/

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@article{47ccd76c71534994a060b37fba109c10,

title = "Magneto-transport study of top- and back-gated LaAlO3/SrTiO3 heterostructures",

abstract = "We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO3/SrTiO3 heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the back gate strongly modifies the electron mobility while the top gate mainly varies the carrier density. The evolution of the spin-orbit interaction is also followed as a function of top and back gating.",

author = "W. Liu and S. Gariglio and A. F{\^e}te and D. Li and M. Boselli and D. Stornaiuolo and J.-M. Triscone",

year = "2015",

month = jun,

doi = "10.1063/1.4921068",

language = "English",

volume = "3",

journal = "APL Materials",

issn = "2166-532X",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Magneto-transport study of top- and back-gated LaAlO3/SrTiO3 heterostructures

AU - Liu, W.

AU - Gariglio, S.

AU - Fête, A.

AU - Li, D.

AU - Boselli, M.

AU - Stornaiuolo, D.

AU - Triscone, J.-M.

PY - 2015/6

Y1 - 2015/6

N2 - We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO3/SrTiO3 heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the back gate strongly modifies the electron mobility while the top gate mainly varies the carrier density. The evolution of the spin-orbit interaction is also followed as a function of top and back gating.

AB - We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO3/SrTiO3 heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the back gate strongly modifies the electron mobility while the top gate mainly varies the carrier density. The evolution of the spin-orbit interaction is also followed as a function of top and back gating.

UR - http://www.scopus.com/inward/record.url?scp=85005943259&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85005943259&origin=recordpage

U2 - 10.1063/1.4921068

DO - 10.1063/1.4921068

M3 - RGC 21 - Publication in refereed journal

SN - 2166-532X

VL - 3

JO - APL Materials

JF - APL Materials

IS - 6

M1 - 062805

ER -