Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO

X. L. Wang; P. S. Ku; Q. Shao; W. F. Cheng; C. W. Leung; A. Ruotolo

doi:10.1063/1.4834795

Author(s)

P. S. Ku
Q. Shao
W. F. Cheng
C. W. Leung

Detail(s)

Original language	English
Article number	223508
Journal / Publication	Applied Physics Letters
Volume	103
Issue number	22
Online published	25 Nov 2013
Publication status	Published - 25 Nov 2013

Link(s)

DOI	DOI https://doi.org/10.1063/1.4834795 Final Published version
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Attachment(s)	Documents 5858882.pdf Final Published version, 1.3 MB, PDF Publisher's Copyright Statement COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in X. L. Wang, P. S. Ku, Q. Shao, W. F. Cheng, C. W. Leung, and A. Ruotolo , "Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO", Appl. Phys. Lett. 103, 223508 (2013) and may be found at https://doi.org/10.1063/1.4834795.
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84888618130&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(e022376c-6ffd-4175-80e2-e523f782d3bd).html

Abstract

We induced bipolar resistive switching in p-type nickel oxide. By probing the magnetic properties of the films, we proved that bipolar resistive switching in this antiferromagnetic oxide was due to the formation and rupture of oxygen-vacancy filaments, rather than electrochemical growth and dissolution of nickel-ion filaments. In the low resistive state, oxygen-mediated super-exchange interaction was suppressed along the conductive paths. This led to a reduction of the saturation moment but not the appearance of a ferromagnetic phase, excluding the formation of nickel filaments. © 2013 AIP Publishing LLC.