Abstract
We induced bipolar resistive switching in p-type nickel oxide. By probing the magnetic properties of the films, we proved that bipolar resistive switching in this antiferromagnetic oxide was due to the formation and rupture of oxygen-vacancy filaments, rather than electrochemical growth and dissolution of nickel-ion filaments. In the low resistive state, oxygen-mediated super-exchange interaction was suppressed along the conductive paths. This led to a reduction of the saturation moment but not the appearance of a ferromagnetic phase, excluding the formation of nickel filaments. © 2013 AIP Publishing LLC.
| Original language | English |
|---|---|
| Article number | 223508 |
| Journal | Applied Physics Letters |
| Volume | 103 |
| Issue number | 22 |
| Online published | 25 Nov 2013 |
| DOIs | |
| Publication status | Published - 25 Nov 2013 |
Publisher's Copyright Statement
- COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in X. L. Wang, P. S. Ku, Q. Shao, W. F. Cheng, C. W. Leung, and A. Ruotolo , "Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO", Appl. Phys. Lett. 103, 223508 (2013) and may be found at https://doi.org/10.1063/1.4834795.
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