Skip to main navigation Skip to search Skip to main content

Magnetic anisotropy of strain-engineered InMnAs ferromagnetic films and easy-axis manipulation from out-of-plane to in-plane orientations

X. Liu, W. L. Lim, Z. Ge, S. Shen, T. Wojtowicz, K. M. Yu, W. Walukiewicz, M. Dobrowolska, J. K. Furdyna

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

Ferromagnetic In 0.88Mn 0.12As films were grown on In 0.70Al 0.30As/AlSb/GaAs hybrid substrates by low-temperature molecular beam epitaxy. The built-in compressive strain leads to an in-plane easy axis of magnetization. Detailed studies of magnetic anisotropy by direct SQUID magnetization measurements, by ferromagnetic resonance measurements, and by the planar Hall effect unambiguously show the existence of both uniaxial and cubic anisotropy in the layer plane, similar to that observed previously in GaMnAs. However, at low temperature the in-plane easy axis of InMnAs is along the 〈110〉 direction, in contrast to the 〈100〉 direction observed in GaMnAs layers. © 2005 American Institute of Physics.
Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages367-370
Volume772
DOIs
Publication statusPublished - 30 Jun 2005
Externally publishedYes
Event27th International Conference on the Physics of Semiconductors (ICPS 27) - Flagstaff, AZ, United States
Duration: 26 Jul 200430 Jul 2004

Publication series

Name
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference27th International Conference on the Physics of Semiconductors (ICPS 27)
PlaceUnited States
CityFlagstaff, AZ
Period26/07/0430/07/04

Fingerprint

Dive into the research topics of 'Magnetic anisotropy of strain-engineered InMnAs ferromagnetic films and easy-axis manipulation from out-of-plane to in-plane orientations'. Together they form a unique fingerprint.

Cite this