Low-temperature redistribution of As in Si during Pd2Si formation
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 1015-1017 |
| Journal / Publication | Applied Physics Letters |
| Volume | 38 |
| Issue number | 12 |
| Publication status | Published - 1981 |
| Externally published | Yes |
Link(s)
Abstract
We have investigated the change in depth compositional profiles of implanted As in Si due to Pd2Si formation by using anodic oxidation and neutron activation analysis. We found that a high concentration (∼1×1021/cm3) of implanted As was snowplowed by the moving silicide-Si interface into the substrate Si during Pd2Si formation at 250°C. In other words, we have found a very low temperature process of doping As into Si. The amount of snowplowed As was found to be greater in samples which were preannealed at 900°C - 30 min before silicide formation than those without the preannealing.
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Citation Format(s)
Low-temperature redistribution of As in Si during Pd2Si formation. / Ohdomari, I.; Tu, K. N.; Suguro, K. et al.
In: Applied Physics Letters, Vol. 38, No. 12, 1981, p. 1015-1017.
In: Applied Physics Letters, Vol. 38, No. 12, 1981, p. 1015-1017.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
