Low-temperature redistribution of As in Si during Pd2Si formation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • I. Ohdomari
  • K. Suguro
  • M. Akiyama
  • I. Kimura
  • K. Yoneda

Detail(s)

Original languageEnglish
Pages (from-to)1015-1017
Journal / PublicationApplied Physics Letters
Volume38
Issue number12
Publication statusPublished - 1981
Externally publishedYes

Abstract

We have investigated the change in depth compositional profiles of implanted As in Si due to Pd2Si formation by using anodic oxidation and neutron activation analysis. We found that a high concentration (∼1×1021/cm3) of implanted As was snowplowed by the moving silicide-Si interface into the substrate Si during Pd2Si formation at 250°C. In other words, we have found a very low temperature process of doping As into Si. The amount of snowplowed As was found to be greater in samples which were preannealed at 900°C - 30 min before silicide formation than those without the preannealing.

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Citation Format(s)

Low-temperature redistribution of As in Si during Pd2Si formation. / Ohdomari, I.; Tu, K. N.; Suguro, K.; Akiyama, M.; Kimura, I.; Yoneda, K.

In: Applied Physics Letters, Vol. 38, No. 12, 1981, p. 1015-1017.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review