Low-temperature redistribution of As in Si during Ni silicide formation
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 2725-2728 |
| Journal / Publication | Journal of Applied Physics |
| Volume | 56 |
| Issue number | 10 |
| Publication status | Published - 1984 |
| Externally published | Yes |
Link(s)
Abstract
We have investigated the redistribution of implanted As during Ni 2Si formation at 275 and 300°C and NiSi formation at 400 to 700°C with neutron activation analysis and Hall effect measurement. Some of the implanted As atoms were found to redistribute themselves near the silicide-Si interface during both Ni2Si and NiSi formation. The depth of the redistribution extends about 100 Å into Si and is affected slightly by the formation temperature of NiSi. A fraction of the redistributed As is electrically active and the fraction increases with the annealing temperature. The maximum electrical activity of redistributed As during NiSi formation at 700°C is estimated to be 6.5%.
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Citation Format(s)
Low-temperature redistribution of As in Si during Ni silicide formation. / Ohdomari, I.; Akiyama, M.; Maeda, T. et al.
In: Journal of Applied Physics, Vol. 56, No. 10, 1984, p. 2725-2728.
In: Journal of Applied Physics, Vol. 56, No. 10, 1984, p. 2725-2728.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
