Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection

Wei-Cheng Lien; Dung-Sheng Tsai; Shu-Hsien Chiu; Debbie G. Senesky; Roya Maboudian; Albert P. Pisano; Jr-Hau He

doi:10.1109/LED.2011.2164570

Author(s)

Wei-Cheng Lien
Dung-Sheng Tsai
Shu-Hsien Chiu
Debbie G. Senesky
Roya Maboudian
Albert P. Pisano

Detail(s)

Original language	English
Article number	6022746
Pages (from-to)	1564-1566
Journal / Publication	IEEE Electron Device Letters
Volume	32
Issue number	11
Online published	18 Sept 2011
Publication status	Published - Nov 2011
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1109/LED.2011.2164570 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-80054967567&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(0660066e-a60a-44e2-8c64-997ca1f6023a).html

Abstract

This work demonstrates high-temperature operation of metal-semiconductor-metal photodetectors (MSM PDs) using low-temperature, ion beam-assisted deposition of nanocrystalline SiC thin films and hydrothermal synthesis of ZnO nanorod arrays (NRAs). Due to the incorporation of ZnO NRAs, the photo-to-dark current ratio of SiC MSM PDs is increased from 4.9 to 13.3 at 25 °C and from 4.9 to 7.6 at 200 °C. The enhancement in the sensitivity suggests that the ZnO NRAs could serve as an effective antireflective layer to guide more light into the SiC MSM PDs. This was confirmed through the characterization of reflectance measurements and finite-difference time-domain analysis. These results support the integration of nanocrystalline SiC thin films and ZnO NRAs for use in high-temperature photodetection applications.

Research Area(s)

Nanowires, photodetectors (PDs), SiC, ZnO

Citation Format(s)

[ RIS ] [ BibTeX ]

Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection. / Lien, Wei-Cheng; Tsai, Dung-Sheng; Chiu, Shu-Hsien et al.
In: IEEE Electron Device Letters, Vol. 32, No. 11, 6022746, 11.2011, p. 1564-1566.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Lien, W-C, Tsai, D-S, Chiu, S-H, Senesky, DG, Maboudian, R, Pisano, AP & He, J-H 2011, 'Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection', IEEE Electron Device Letters, vol. 32, no. 11, 6022746, pp. 1564-1566. https://doi.org/10.1109/LED.2011.2164570

Lien, W.-C., Tsai, D.-S., Chiu, S.-H., Senesky, D. G., Maboudian, R., Pisano, A. P., & He, J.-H. (2011). Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection. IEEE Electron Device Letters, 32(11), 1564-1566. Article 6022746. https://doi.org/10.1109/LED.2011.2164570

Lien WC, Tsai DS, Chiu SH, Senesky DG, Maboudian R, Pisano AP et al. Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection. IEEE Electron Device Letters. 2011 Nov;32(11):1564-1566. 6022746. Epub 2011 Sept 18. doi: 10.1109/LED.2011.2164570

Lien, Wei-Cheng ; Tsai, Dung-Sheng ; Chiu, Shu-Hsien et al. / Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection. In: IEEE Electron Device Letters. 2011 ; Vol. 32, No. 11. pp. 1564-1566.