Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)2010-2020
Journal / PublicationPhysical Review B
Volume29
Issue number4
Publication statusPublished - 1984
Externally publishedYes

Abstract

It has been recently reported that the formation of transition-metal silicides induces a strong enhancement of dopant diffusion in silicon at low temperatures (250°C). However, the mechanism which is responsible for the enhanced diffusion has not been addressed. We have undertaken a systematic study to clarify the mechanism. Our results show that diffusion enhancement occurs only as a result of advancing silicide-silicon interfaces. We also find that diffusion enhancement is a unique feature of the interfacial formation of near-noble-metal silicides, but not refractory-metal silicides. By correlating these observations with the interstitial diffusion of near-noble-metal atoms in silicon, we propose that during silicide formation a large number of point defects is generated in the silicon near the silicide-silicon interface, and that these point defects are responsible for the enhanced diffusivity of substitutional dopants at low temperatures. © 1984 The American Physical Society.

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