Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Article number | 182101 |
Journal / Publication | Applied Physics Letters |
Volume | 105 |
Issue number | 18 |
Publication status | Published - 3 Nov 2014 |
Externally published | Yes |
Link(s)
Abstract
A three-dimensional (3D) double-layer HfO2-based vertical-resistive random access memory (VRRAM) with low-resistivity C54-TiSi2 as horizontal electrodes is demonstrated using complementary metal-oxide semiconductor processing. The electrical measurements show bipolar resistive switching by using C54-TiSi2 as electrodes for resistive switching (RS) applications. The statistical analysis exhibits cycle-to-cycle and cell-to-cell stable non-volatile properties with robust endurance (100 cycles) and long term data retention (104 s), suggesting that the ultrathin sidewall of C54-TiSi2 nanoscale electrodes serve to confine and stabilize the random nature of the conducting nanofilaments. The superior RS characteristics demonstrated here highlight the applicability of C54-TiSi2 sidewall-confinement nanoscale electrodes to VRRAM.
Citation Format(s)
Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory. / Durán Retamal, José Ramón; Kang, Chen-Fang; Yang, Po-Kang et al.
In: Applied Physics Letters, Vol. 105, No. 18, 182101, 03.11.2014.
In: Applied Physics Letters, Vol. 105, No. 18, 182101, 03.11.2014.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review