Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • José Ramón Durán Retamal
  • Chen-Fang Kang
  • Po-Kang Yang
  • Chuan-Pei Lee
  • Der-Hsien Lien
  • Chih-Hsiang Ho

Detail(s)

Original languageEnglish
Article number182101
Journal / PublicationApplied Physics Letters
Volume105
Issue number18
Publication statusPublished - 3 Nov 2014
Externally publishedYes

Abstract

A three-dimensional (3D) double-layer HfO2-based vertical-resistive random access memory (VRRAM) with low-resistivity C54-TiSi2 as horizontal electrodes is demonstrated using complementary metal-oxide semiconductor processing. The electrical measurements show bipolar resistive switching by using C54-TiSi2 as electrodes for resistive switching (RS) applications. The statistical analysis exhibits cycle-to-cycle and cell-to-cell stable non-volatile properties with robust endurance (100 cycles) and long term data retention (10s), suggesting that the ultrathin sidewall of C54-TiSi2 nanoscale electrodes serve to confine and stabilize the random nature of the conducting nanofilaments. The superior RS characteristics demonstrated here highlight the applicability of C54-TiSi2 sidewall-confinement nanoscale electrodes to VRRAM.

Citation Format(s)

Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory. / Durán Retamal, José Ramón; Kang, Chen-Fang; Yang, Po-Kang; Lee, Chuan-Pei; Lien, Der-Hsien; Ho, Chih-Hsiang; He, Jr-Hau.

In: Applied Physics Letters, Vol. 105, No. 18, 182101, 03.11.2014.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review