Low-loss Ga:Er:LiTaO3 optical waveguide for integrated optics

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

2 Scopus Citations
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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)199-201
Journal / PublicationMaterials Letters
Volume227
Early online date16 May 2018
Publication statusPublished - 15 Sep 2018

Abstract

Low-loss gallium(Ga3+)-diffused erbium(Er3+)-doped LiTaO3(Ga:Er:LiTaO3) channel waveguide was fabricated using erbium metal film diffusion followed by photolithographically patterned gallium oxide(Ga2O3) strip diffusion. Secondary ion mass spectrometry analysis shows that Er3+ concentration follows a Gaussian profile, Ga3+ concentration follows a sum of two error functions at the waveguide surface and a Gaussian profile in the depth direction. Optical studies show that the waveguide supports single-mode propagation at 1.5 μm wavelength with a coupling loss <1 dB and a waveguide loss 0.2(0.3) dB/cm for the TE(TM) mode, and with a small polarization dependence in mode field distribution. Stable optical gain of ∼1.0 dB/cm was measured at 1547 nm wavelength with 220 mW pump power of 980 nm wavelength, indicating good photorefractive damage resistance of the waveguide.

Research Area(s)

  • Microstructure, Optical materials and properties, Surfaces

Citation Format(s)

Low-loss Ga:Er:LiTaO3 optical waveguide for integrated optics. / Yang, Xiao-Fei; Zhang, Chao-Yang; Zhang, Zi-Bo; Pun, Edwin Yue-Bun; Zhang, De-Long.

In: Materials Letters, Vol. 227, 15.09.2018, p. 199-201.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review