TY - JOUR
T1 - Low-temperature redistribution of As in Si during Pd2Si formation
AU - Ohdomari, I.
AU - Tu, K. N.
AU - Suguro, K.
AU - Akiyama, M.
AU - Kimura, I.
AU - Yoneda, K.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 1981
Y1 - 1981
N2 - We have investigated the change in depth compositional profiles of implanted As in Si due to Pd2Si formation by using anodic oxidation and neutron activation analysis. We found that a high concentration (∼1×1021/cm3) of implanted As was snowplowed by the moving silicide-Si interface into the substrate Si during Pd2Si formation at 250°C. In other words, we have found a very low temperature process of doping As into Si. The amount of snowplowed As was found to be greater in samples which were preannealed at 900°C - 30 min before silicide formation than those without the preannealing.
AB - We have investigated the change in depth compositional profiles of implanted As in Si due to Pd2Si formation by using anodic oxidation and neutron activation analysis. We found that a high concentration (∼1×1021/cm3) of implanted As was snowplowed by the moving silicide-Si interface into the substrate Si during Pd2Si formation at 250°C. In other words, we have found a very low temperature process of doping As into Si. The amount of snowplowed As was found to be greater in samples which were preannealed at 900°C - 30 min before silicide formation than those without the preannealing.
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U2 - 10.1063/1.92250
DO - 10.1063/1.92250
M3 - RGC 21 - Publication in refereed journal
SN - 0003-6951
VL - 38
SP - 1015
EP - 1017
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 12
ER -