Low temperature quality factor scaling of laterally-vibrating AlN piezoelectric-on-silicon resonators

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Author(s)

Detail(s)

Original languageEnglish
Title of host publicationProcedia Engineering
PublisherELSEVIER
Pages7-10
Volume120
ISBN (Print)1877-7058
Publication statusPublished - Sep 2015

Conference

Title29th European Conference on Solid-State Transducers, EUROSENSORS 2015
Location
PlaceGermany
CityFreiburg
Period6 - 9 September 2015

Link(s)

Abstract

We present empirical results showing that the quality factors (Q) of 48MHz Aluminium Nitride (AlN) thin-film piezoelectric-onsilicon (TPoS) resonators double as a result of cryogenic cooling them from room temperature to 78K. The increase in Qu leads to a corresponding 5dB reduction in insertion loss (IL) and a motional resistance as low as 154Ω. This temperature scaling effect on Q is however absent at shorter acoustic wavelengths (λ) for the same resonators vibrating at higher order modes (143MHz). This absence was also found to be the case for other resonators with interdigitated electrode layouts to transduce 3rd and 5th order vibration modes of similar λ (107MHz). These results suggest that reducing the ratio of λ to the resonator thickness (h) strongly determines the dominance of anchor losses that do not scale with temperature.

Research Area(s)

  • Anchor loss, Cryogenic cooling, Piezoelectric-on-silicon resonators

Citation Format(s)

Low temperature quality factor scaling of laterally-vibrating AlN piezoelectric-on-silicon resonators. / Tu, C.; Lee, J. E.-Y.

Procedia Engineering. Vol. 120 ELSEVIER, 2015. p. 7-10.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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