Low temperature quality factor scaling of laterally-vibrating AlN piezoelectric-on-silicon resonators

C. Tu; J. E.-Y Lee

doi:10.1016/j.proeng.2015.08.554

Low temperature quality factor scaling of laterally-vibrating AlN piezoelectric-on-silicon resonators

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

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Abstract

We present empirical results showing that the quality factors (Q) of 48MHz Aluminium Nitride (AlN) thin-film piezoelectric-onsilicon (TPoS) resonators double as a result of cryogenic cooling them from room temperature to 78K. The increase in Q_u leads to a corresponding 5dB reduction in insertion loss (IL) and a motional resistance as low as 154Ω. This temperature scaling effect on Q is however absent at shorter acoustic wavelengths (λ) for the same resonators vibrating at higher order modes (143MHz). This absence was also found to be the case for other resonators with interdigitated electrode layouts to transduce 3^rd and 5^th order vibration modes of similar λ (107MHz). These results suggest that reducing the ratio of λ to the resonator thickness (h) strongly determines the dominance of anchor losses that do not scale with temperature.

Original language	English
Title of host publication	Procedia Engineering
Publisher	Elsevier
Pages	7-10
Volume	120
ISBN (Print)	1877-7058
DOIs	https://doi.org/10.1016/j.proeng.2015.08.554
Publication status	Published - Sept 2015
Event	29th European Conference on Solid-State Transducers, EUROSENSORS 2015 - Freiburg, Germany Duration: 6 Sept 2015 → 9 Sept 2015

Conference

Conference	29th European Conference on Solid-State Transducers, EUROSENSORS 2015
Place	Germany
City	Freiburg
Period	6/09/15 → 9/09/15

Research Keywords

Anchor loss
Cryogenic cooling
Piezoelectric-on-silicon resonators

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This full text is made available under CC-BY-NC-ND 4.0. https://creativecommons.org/licenses/by-nc-nd/4.0/

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title = "Low temperature quality factor scaling of laterally-vibrating AlN piezoelectric-on-silicon resonators",

abstract = "We present empirical results showing that the quality factors (Q) of 48MHz Aluminium Nitride (AlN) thin-film piezoelectric-onsilicon (TPoS) resonators double as a result of cryogenic cooling them from room temperature to 78K. The increase in Qu leads to a corresponding 5dB reduction in insertion loss (IL) and a motional resistance as low as 154Ω. This temperature scaling effect on Q is however absent at shorter acoustic wavelengths (λ) for the same resonators vibrating at higher order modes (143MHz). This absence was also found to be the case for other resonators with interdigitated electrode layouts to transduce 3rd and 5th order vibration modes of similar λ (107MHz). These results suggest that reducing the ratio of λ to the resonator thickness (h) strongly determines the dominance of anchor losses that do not scale with temperature.",

keywords = "Anchor loss, Cryogenic cooling, Piezoelectric-on-silicon resonators",

author = "C. Tu and Lee, {J. E.-Y}",

year = "2015",

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doi = "10.1016/j.proeng.2015.08.554",

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note = "29th European Conference on Solid-State Transducers, EUROSENSORS 2015 ; Conference date: 06-09-2015 Through 09-09-2015",

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T1 - Low temperature quality factor scaling of laterally-vibrating AlN piezoelectric-on-silicon resonators

AU - Tu, C.

AU - Lee, J. E.-Y

PY - 2015/9

Y1 - 2015/9

N2 - We present empirical results showing that the quality factors (Q) of 48MHz Aluminium Nitride (AlN) thin-film piezoelectric-onsilicon (TPoS) resonators double as a result of cryogenic cooling them from room temperature to 78K. The increase in Qu leads to a corresponding 5dB reduction in insertion loss (IL) and a motional resistance as low as 154Ω. This temperature scaling effect on Q is however absent at shorter acoustic wavelengths (λ) for the same resonators vibrating at higher order modes (143MHz). This absence was also found to be the case for other resonators with interdigitated electrode layouts to transduce 3rd and 5th order vibration modes of similar λ (107MHz). These results suggest that reducing the ratio of λ to the resonator thickness (h) strongly determines the dominance of anchor losses that do not scale with temperature.

AB - We present empirical results showing that the quality factors (Q) of 48MHz Aluminium Nitride (AlN) thin-film piezoelectric-onsilicon (TPoS) resonators double as a result of cryogenic cooling them from room temperature to 78K. The increase in Qu leads to a corresponding 5dB reduction in insertion loss (IL) and a motional resistance as low as 154Ω. This temperature scaling effect on Q is however absent at shorter acoustic wavelengths (λ) for the same resonators vibrating at higher order modes (143MHz). This absence was also found to be the case for other resonators with interdigitated electrode layouts to transduce 3rd and 5th order vibration modes of similar λ (107MHz). These results suggest that reducing the ratio of λ to the resonator thickness (h) strongly determines the dominance of anchor losses that do not scale with temperature.

KW - Anchor loss

KW - Cryogenic cooling

KW - Piezoelectric-on-silicon resonators

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DO - 10.1016/j.proeng.2015.08.554

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 1877-7058

VL - 120

SP - 7

EP - 10

BT - Procedia Engineering

PB - Elsevier

T2 - 29th European Conference on Solid-State Transducers, EUROSENSORS 2015

Y2 - 6 September 2015 through 9 September 2015

ER -

Low temperature quality factor scaling of laterally-vibrating AlN piezoelectric-on-silicon resonators

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Research Keywords

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