Low-temperature photoluminescence of hydrogen Ion and plasma implanted silicon and porous silicon

The low-temperature photoluminescence (PL) in the infrared band around the band gap of hydrogen beam-line and plasma implanted silicon and porous silicon was analyzed. The plasma immersion ion implantation (PIII) samples exhibited at least more than one peak at 1.17 eV and a wide photoluminescence band, while beam-line implanted samples exhibited a broad photoluminescence band below the band gap. It was observed that the peak at 1.17 eV was originated from nonphonon emission, which was enhanced by the lattice disorder. The results show that the PIII is an effective technique to introduce the disorder into Si lattice, which is used for Anderson localization and weak confinement.