Low temperature oxygen dissolution in titanium

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

21 Scopus Citations
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Author(s)

  • G. Ottaviani
  • F. Nava
  • G. Queirolo
  • G. Iannuzzi
  • G. de Santi

Detail(s)

Original languageEnglish
Pages (from-to)201-207
Journal / PublicationThin Solid Films
Volume146
Issue number2
Publication statusPublished - 16 Jan 1987
Externally publishedYes

Abstract

In situ resistivity measurements, X-ray diffraction, 4He+ megaelectronvolt backscattering and Auger electron spectrometry were used to investigate the effect of oxygen diffusion on the electrical properties of a thin titanium film deposited onto silicon and heated at temperatures below 500°C. The annealing was performed in a vacuum of 10-5 Pa and in a hot purified helium furnace. The vacuum-annealed samples show a sharp increase in resistivity around 300°C. The increase is not due to silicon diffusion but is attributed to oxygen contamination. The presence of oxygen deforms the hexagonal structure of the titanium; the bond length along the c axis increases proportionally to the resistivity of the film. Annealing at temperatures higher than 500°C promotes silicide formation. The oxygen contained in the titanium film is segregated towards the outermost surface. © 1987.

Bibliographic Note

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Citation Format(s)

Low temperature oxygen dissolution in titanium. / Ottaviani, G.; Nava, F.; Queirolo, G.; Iannuzzi, G.; de Santi, G.; Tu, K. N.

In: Thin Solid Films, Vol. 146, No. 2, 16.01.1987, p. 201-207.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review