Low temperature interfacial reaction in 3D IC nanoscale materials

Yingxia Liu, Yang Lu, K.N. Tu*

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

19 Citations (Scopus)

Abstract

In this review, we cover copper-to-copper (Cu-to-Cu) direct bonding, point contact reaction between silicon (Si) nanowire and metal nanowire, and cold welding of gold (Au) and silver (Ag) nanowires. All of them occur under nanoscale interfaces at low temperatures. For a broader consideration, because Cu is known to exhibit significant anti-pathogen and anti-viral properties, the interfacial reaction in Cu nano-grain metallurgy may be used to manufacture Cu and Cu alloy products to reduce virus transmission, which can have a very large impact to our society. Furthermore, in the future semiconductor technology, because of dense packaging, Joule heating will be serious. Thus, low entropy production process will receive attention, which means low temperature joining technology such as cold welding and nano-welding will be important.
Original languageEnglish
Article number100701
JournalMaterials Science and Engineering R: Reports
Volume151
Online published30 Sept 2022
DOIs
Publication statusPublished - Oct 2022

Research Keywords

  • Cold welding
  • Cu-to-Cu direct bonding
  • Nano welding
  • Nanowires
  • Point contact reaction
  • Pulley-type contacts
  • Surface creep

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