Low temperature etching of silylated resist in oxygen plasma generated by an electron cyclotron resonance source

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

3 Scopus Citations
View graph of relations

Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)3620-3623
Journal / PublicationJournal of the Electrochemical Society
Volume140
Issue number12
Publication statusPublished - Dec 1993
Externally publishedYes

Abstract

Dry development of silylated resist has been studied using an O2 plasma generated by a multipolar electron cyclotron resonance source. Etch rate, uniformity, selectivity, and profile were investigated as a function of process parameters including microwave power, RF power, flow rate, sample area, pressure, temperature, and gas addition. It was found that etch rate increases as microwave and/or RF power increase. Vertical etch profile was obtained by using low pressure (3 mTorr) and 50 W RF power. As the area of the samples was increased from 1 to 81 cm2, the etch rate decreased from 0.85 to 0.6 μm/min at a flow of 10 sccm O2 but remained constant at 0. 9 μm/min with 100 sccm O2. Etch rate was independent of temperature and decreased with the addition of N2or CF4. Etch uniformity was within ±3% across a 150 mm wafer for most etch conditions. The selectivity of the silylated layer over the photoresist degraded from 445 to 14 as RF power was increased from 25 to 100 W. Residue-free surface and vertical profile have been obtained with features as small as 0.1 μm.