Low temperature doping of arsenic atoms in silicon during Pd2Si formation
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 349-354 |
Journal / Publication | Thin Solid Films |
Volume | 89 |
Issue number | 4 |
Publication status | Published - 26 Mar 1982 |
Externally published | Yes |
Link(s)
Abstract
Redistribution of implanted arsenic atoms during Pd2Si formation, the so-called "snowplow effect", was studied by neutron activation analysis and Hall effect and resistivity measurements for determining the arsenic and carrier distribution profiles in silicon. Arsenic atoms in the implanted silicon region were found to be rejected from the newly formed silicide layer and to diffuse into the underlying silicon region at such low temperatures as 250°C. The carrier concentration profiles nicely overlap the arsenic profiles with a maximum activation ratio of 58%. The possibility of a low temperature doping technique using the snowplow effect is suggested. © 1982.
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Citation Format(s)
Low temperature doping of arsenic atoms in silicon during Pd2Si formation. / Ohdomari, I.; Suguro, K.; Akiyama, M.; Maeda, T.; Tu, K. N.; Kimura, I.; Yoneda, K.
In: Thin Solid Films, Vol. 89, No. 4, 26.03.1982, p. 349-354.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review