Low temperature doping of arsenic atoms in silicon during Pd2Si formation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • I. Ohdomari
  • K. Suguro
  • M. Akiyama
  • T. Maeda
  • I. Kimura
  • K. Yoneda

Detail(s)

Original languageEnglish
Pages (from-to)349-354
Journal / PublicationThin Solid Films
Volume89
Issue number4
Publication statusPublished - 26 Mar 1982
Externally publishedYes

Abstract

Redistribution of implanted arsenic atoms during Pd2Si formation, the so-called "snowplow effect", was studied by neutron activation analysis and Hall effect and resistivity measurements for determining the arsenic and carrier distribution profiles in silicon. Arsenic atoms in the implanted silicon region were found to be rejected from the newly formed silicide layer and to diffuse into the underlying silicon region at such low temperatures as 250°C. The carrier concentration profiles nicely overlap the arsenic profiles with a maximum activation ratio of 58%. The possibility of a low temperature doping technique using the snowplow effect is suggested. © 1982.

Bibliographic Note

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Citation Format(s)

Low temperature doping of arsenic atoms in silicon during Pd2Si formation. / Ohdomari, I.; Suguro, K.; Akiyama, M.; Maeda, T.; Tu, K. N.; Kimura, I.; Yoneda, K.

In: Thin Solid Films, Vol. 89, No. 4, 26.03.1982, p. 349-354.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review