Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces of nanotwinned Cu

Chien-Min Liu; Han-Wen Lin; Yi-Sa Huang; Yi-Cheng Chu; Chih Chen; Dian-Rong Lyu; Kuan-Neng Chen; King-Ning Tu

doi:10.1038/srep09734

Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces of nanotwinned Cu

Chien-Min Liu
, Han-Wen Lin
, Yi-Sa Huang
, Yi-Cheng Chu
, Chih Chen^*
, Dian-Rong Lyu
, Kuan-Neng Chen
, King-Ning Tu

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

248 Citations (Scopus)

67 Downloads (CityUHK Scholars)

Abstract

Direct Cu-to-Cu bonding was achieved at temperatures of 150-250 °C using a compressive stress of 100 psi (0.69 MPa) held for 10-60 min at 10^-3 torr. The key controlling parameter for direct bonding is rapid surface diffusion on (111) surface of Cu. Instead of using (111) oriented single crystal of Cu, oriented (111) texture of extremely high degree, exceeding 90%, was fabricated using the oriented nano-twin Cu. The bonded interface between two (111) surfaces forms a twist-type grain boundary. If the grain boundary has a low angle, it has a hexagonal network of screw dislocations. Such network image was obtained by plan-view transmission electron microscopy. A simple kinetic model of surface creep is presented; and the calculated and measured time of bonding is in reasonable agreement.

Original language	English
Article number	9734
Journal	Scientific Reports
Volume	5
DOIs	https://doi.org/10.1038/srep09734
Publication status	Published - 12 May 2015
Externally published	Yes

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title = "Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces of nanotwinned Cu",

abstract = "Direct Cu-to-Cu bonding was achieved at temperatures of 150-250 °C using a compressive stress of 100 psi (0.69 MPa) held for 10-60 min at 10-3 torr. The key controlling parameter for direct bonding is rapid surface diffusion on (111) surface of Cu. Instead of using (111) oriented single crystal of Cu, oriented (111) texture of extremely high degree, exceeding 90\%, was fabricated using the oriented nano-twin Cu. The bonded interface between two (111) surfaces forms a twist-type grain boundary. If the grain boundary has a low angle, it has a hexagonal network of screw dislocations. Such network image was obtained by plan-view transmission electron microscopy. A simple kinetic model of surface creep is presented; and the calculated and measured time of bonding is in reasonable agreement.",

author = "Chien-Min Liu and Han-Wen Lin and Yi-Sa Huang and Yi-Cheng Chu and Chih Chen and Dian-Rong Lyu and Kuan-Neng Chen and King-Ning Tu",

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T1 - Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces of nanotwinned Cu

AU - Liu, Chien-Min

AU - Lin, Han-Wen

AU - Huang, Yi-Sa

AU - Chu, Yi-Cheng

AU - Chen, Chih

AU - Lyu, Dian-Rong

AU - Chen, Kuan-Neng

AU - Tu, King-Ning

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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N2 - Direct Cu-to-Cu bonding was achieved at temperatures of 150-250 °C using a compressive stress of 100 psi (0.69 MPa) held for 10-60 min at 10-3 torr. The key controlling parameter for direct bonding is rapid surface diffusion on (111) surface of Cu. Instead of using (111) oriented single crystal of Cu, oriented (111) texture of extremely high degree, exceeding 90%, was fabricated using the oriented nano-twin Cu. The bonded interface between two (111) surfaces forms a twist-type grain boundary. If the grain boundary has a low angle, it has a hexagonal network of screw dislocations. Such network image was obtained by plan-view transmission electron microscopy. A simple kinetic model of surface creep is presented; and the calculated and measured time of bonding is in reasonable agreement.

AB - Direct Cu-to-Cu bonding was achieved at temperatures of 150-250 °C using a compressive stress of 100 psi (0.69 MPa) held for 10-60 min at 10-3 torr. The key controlling parameter for direct bonding is rapid surface diffusion on (111) surface of Cu. Instead of using (111) oriented single crystal of Cu, oriented (111) texture of extremely high degree, exceeding 90%, was fabricated using the oriented nano-twin Cu. The bonded interface between two (111) surfaces forms a twist-type grain boundary. If the grain boundary has a low angle, it has a hexagonal network of screw dislocations. Such network image was obtained by plan-view transmission electron microscopy. A simple kinetic model of surface creep is presented; and the calculated and measured time of bonding is in reasonable agreement.

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DO - 10.1038/srep09734

M3 - RGC 21 - Publication in refereed journal

C2 - 25962757

SN - 2045-2322

VL - 5

JO - Scientific Reports

JF - Scientific Reports

M1 - 9734

ER -

Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces of nanotwinned Cu

Abstract

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