Abstract
The crystallization temperature of Bi1.5 Zn0.5 Nb1.5 O6.5 (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the crystallinity and dielectric properties improved after a postannealing at 400 °C for 2 h in an oxygen atmosphere. BZN films crystallized with an energy density of 27 mJ cm2 at a substrate temperature of 400 °C with postannealing showed dielectric properties comparable to those of rapid thermal annealed BZN films. Laser crystallization at substrate temperatures ≤400 °C makes integration with polymeric substrates possible. © 2005 American Institute of Physics.
| Original language | English |
|---|---|
| Article number | 232905 |
| Pages (from-to) | 1-3 |
| Journal | Applied Physics Letters |
| Volume | 87 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 2005 |
| Externally published | Yes |
Bibliographical note
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