Low Temperature and High Concentration Ozone Prepared Ultra-thin HfO2 Dielectric Films

L. Wang; K. Xue; J. B. Xu; A. P. Huang; Paul K. Chu

doi:10.1109/EDSSC.2005.1635234

Low Temperature and High Concentration Ozone Prepared Ultra-thin HfO₂ Dielectric Films

L. Wang
, K. Xue
, J. B. Xu
, A. P. Huang
, Paul K. Chu

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

With low temperature and high concentration ozone oxidation, ultra-thin HfO₂ films were fabricated on silicon substrate. The chemical bonds were analyzed by investigating the chemical shifts of Hf 4f and Si 2p core-level spectra of x-ray photoelectron spectroscopy. The chemical composition was determined by Rutherford backscattering spectrometry spectra. The capacitance - voltage curves obtained from the metal-oxide-semiconductor capacitors consisting of the ozone oxidized HfO₂ show a negligible hysteresis variation of about 5mV and a comparably low fixed charge density. © 2005 IEEE.

Original language	English
Title of host publication	2005 IEEE Conference on Electron Devices and Solid-State Circuits
Publisher	IEEE
Pages	177-179
ISBN (Print)	0780393392, 9780780393394
DOIs	https://doi.org/10.1109/EDSSC.2005.1635234
Publication status	Published - Dec 2005
Event	2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005) - New World Renaissance Hotel, Hong Kong, China Duration: 19 Dec 2005 → 21 Dec 2005

Conference

Conference	2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005)
Place	China
City	Hong Kong
Period	19/12/05 → 21/12/05

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10.1109/EDSSC.2005.1635234

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Cite this

@inproceedings{ac99a984219845228b1c897de47b5e17,

title = "Low Temperature and High Concentration Ozone Prepared Ultra-thin HfO2 Dielectric Films",

abstract = "With low temperature and high concentration ozone oxidation, ultra-thin HfO2 films were fabricated on silicon substrate. The chemical bonds were analyzed by investigating the chemical shifts of Hf 4f and Si 2p core-level spectra of x-ray photoelectron spectroscopy. The chemical composition was determined by Rutherford backscattering spectrometry spectra. The capacitance - voltage curves obtained from the metal-oxide-semiconductor capacitors consisting of the ozone oxidized HfO2 show a negligible hysteresis variation of about 5mV and a comparably low fixed charge density. {\textcopyright} 2005 IEEE.",

author = "L. Wang and K. Xue and Xu, \{J. B.\} and Huang, \{A. P.\} and Chu, \{Paul K.\}",

year = "2005",

month = dec,

doi = "10.1109/EDSSC.2005.1635234",

language = "English",

isbn = "0780393392",

pages = "177--179",

booktitle = "2005 IEEE Conference on Electron Devices and Solid-State Circuits",

publisher = "IEEE",

address = "United States",

note = "2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005) ; Conference date: 19-12-2005 Through 21-12-2005",

}

Wang, L, Xue, K, Xu, JB, Huang, AP & Chu, PK 2005, Low Temperature and High Concentration Ozone Prepared Ultra-thin HfO₂ Dielectric Films. in 2005 IEEE Conference on Electron Devices and Solid-State Circuits., 1635234, IEEE, pp. 177-179, 2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005), Hong Kong, China, 19/12/05. https://doi.org/10.1109/EDSSC.2005.1635234

Low Temperature and High Concentration Ozone Prepared Ultra-thin HfO₂ Dielectric Films. / Wang, L.; Xue, K.; Xu, J. B. et al.
2005 IEEE Conference on Electron Devices and Solid-State Circuits. IEEE, 2005. p. 177-179 1635234.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Low Temperature and High Concentration Ozone Prepared Ultra-thin HfO2 Dielectric Films

AU - Wang, L.

AU - Xue, K.

AU - Xu, J. B.

AU - Huang, A. P.

AU - Chu, Paul K.

PY - 2005/12

Y1 - 2005/12

N2 - With low temperature and high concentration ozone oxidation, ultra-thin HfO2 films were fabricated on silicon substrate. The chemical bonds were analyzed by investigating the chemical shifts of Hf 4f and Si 2p core-level spectra of x-ray photoelectron spectroscopy. The chemical composition was determined by Rutherford backscattering spectrometry spectra. The capacitance - voltage curves obtained from the metal-oxide-semiconductor capacitors consisting of the ozone oxidized HfO2 show a negligible hysteresis variation of about 5mV and a comparably low fixed charge density. © 2005 IEEE.

AB - With low temperature and high concentration ozone oxidation, ultra-thin HfO2 films were fabricated on silicon substrate. The chemical bonds were analyzed by investigating the chemical shifts of Hf 4f and Si 2p core-level spectra of x-ray photoelectron spectroscopy. The chemical composition was determined by Rutherford backscattering spectrometry spectra. The capacitance - voltage curves obtained from the metal-oxide-semiconductor capacitors consisting of the ozone oxidized HfO2 show a negligible hysteresis variation of about 5mV and a comparably low fixed charge density. © 2005 IEEE.

UR - https://www.scopus.com/pages/publications/43549119738

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-43549119738&origin=recordpage

U2 - 10.1109/EDSSC.2005.1635234

DO - 10.1109/EDSSC.2005.1635234

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0780393392

SN - 9780780393394

SP - 177

EP - 179

BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits

PB - IEEE

T2 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005)

Y2 - 19 December 2005 through 21 December 2005

ER -