Low Schottky barrier of rare-earth silicide on n-Si

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)626-628
Journal / PublicationApplied Physics Letters
Volume38
Issue number8
Publication statusPublished - 1981
Externally publishedYes

Abstract

Disilicide of rare-earth metals (Dy, Er, Ho, and Gd) and Y have been formed by reacting the metallic film on both n- and p-type silicons at around 350°C for Schottky-barrier height measurement using I-V technique. A passivation coating of W, or Pt, or both was used to prevent the rare earth from oxidation. Schottky-barrier heights of about 0.4 eV on n-Si and 0.7 eV on p-Si were determined.

Bibliographic Note

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Citation Format(s)

Low Schottky barrier of rare-earth silicide on n-Si. / Tu, K. N.; Thompson, R. D.; Tsaur, B. Y.

In: Applied Physics Letters, Vol. 38, No. 8, 1981, p. 626-628.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review