Low Schottky barrier of rare-earth silicide on n-Si
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 626-628 |
| Journal / Publication | Applied Physics Letters |
| Volume | 38 |
| Issue number | 8 |
| Publication status | Published - 1981 |
| Externally published | Yes |
Link(s)
Abstract
Disilicide of rare-earth metals (Dy, Er, Ho, and Gd) and Y have been formed by reacting the metallic film on both n- and p-type silicons at around 350°C for Schottky-barrier height measurement using I-V technique. A passivation coating of W, or Pt, or both was used to prevent the rare earth from oxidation. Schottky-barrier heights of about 0.4 eV on n-Si and 0.7 eV on p-Si were determined.
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Citation Format(s)
Low Schottky barrier of rare-earth silicide on n-Si. / Tu, K. N.; Thompson, R. D.; Tsaur, B. Y.
In: Applied Physics Letters, Vol. 38, No. 8, 1981, p. 626-628.
In: Applied Physics Letters, Vol. 38, No. 8, 1981, p. 626-628.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
