Low-resistivity C54-TiSi₂ as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory

A three-dimensional (3D) double-layer HfO₂-based vertical-resistive random access memory (VRRAM) with low-resistivity C54-TiSi₂ as horizontal electrodes is demonstrated using complementary metal-oxide semiconductor processing. The electrical measurements show bipolar resistive switching by using C54-TiSi₂ as electrodes for resistive switching (RS) applications. The statistical analysis exhibits cycle-to-cycle and cell-to-cell stable non-volatile properties with robust endurance (100 cycles) and long term data retention (10⁴ s), suggesting that the ultrathin sidewall of C54-TiSi₂ nanoscale electrodes serve to confine and stabilize the random nature of the conducting nanofilaments. The superior RS characteristics demonstrated here highlight the applicability of C54-TiSi₂ sidewall-confinement nanoscale electrodes to VRRAM.