Low pressure plasma immersion ion implantation of silicon

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

18 Scopus Citations
View graph of relations

Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)1661-1668
Journal / PublicationIEEE Transactions on Plasma Science
Volume26
Issue number6
Publication statusPublished - 1998

Abstract

Mono-energetic plasma immersion ion implantation (PHI) into silicon can be attained only under collionless plasma conditions. In order to reduce the current load on the high voltage power supply and modulator and sample heating caused by implanted ions, the plasma pressure must be kept low (

Research Area(s)

  • Plasma immersion ion implantation, Semiconductor processing, Silicon

Citation Format(s)

Low pressure plasma immersion ion implantation of silicon. / Fan, Zhi-Neng; Chen, Qing-Chuan; Chu, Paul K.; Chan, Chung.

In: IEEE Transactions on Plasma Science, Vol. 26, No. 6, 1998, p. 1661-1668.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review