Low pressure plasma immersion ion implantation of silicon
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 1661-1668 |
| Journal / Publication | IEEE Transactions on Plasma Science |
| Volume | 26 |
| Issue number | 6 |
| Publication status | Published - 1998 |
Link(s)
Abstract
Mono-energetic plasma immersion ion implantation (PHI) into silicon can be attained only under collionless plasma conditions. In order to reduce the current load on the high voltage power supply and modulator and sample heating caused by implanted ions, the plasma pressure must be kept low (
Research Area(s)
- Plasma immersion ion implantation, Semiconductor processing, Silicon
Citation Format(s)
Low pressure plasma immersion ion implantation of silicon. / Fan, Zhi-Neng; Chen, Qing-Chuan; Chu, Paul K.; Chan, Chung.
In: IEEE Transactions on Plasma Science, Vol. 26, No. 6, 1998, p. 1661-1668.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
