Low operational voltage and high performance organic field effect memory transistor with solution processed graphene oxide charge storage media

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

11 Scopus Citations
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Author(s)

  • Tae-Wook Kim
  • Nathan Cernetic
  • Yan Gao
  • Sukang Bae
  • Sanghyun Lee
  • Hong Ma
  • Hongzheng Chen

Detail(s)

Original languageEnglish
Pages (from-to)2775-2782
Journal / PublicationOrganic Electronics: physics, materials, applications
Volume15
Issue number11
Publication statusPublished - Nov 2014
Externally publishedYes

Abstract

Low voltage organic field effect memory transistors are demonstrated by adapting a hybrid gate dielectric and a solution processed graphene oxide charge trap layer. The hybrid gate dielectric is composed of aluminum oxide (AlO x) and [8-(11-phenoxy-undecyloxy)-octyl]phosphonic acid (PhO-19-PA) plays an important role of both preventing leakage current from gate electrode and providing an appropriate surface energy to allow for uniform spin-casting of graphene oxide (GO). The hybrid gate dielectric has a breakdown voltage greater than 6 V and capacitance of 0.47 μF/cm2. Graphene oxide charge trap layer is spin-cast on top of the hybrid dielectric and has a resulting thickness of approximately 9 nm. The final device structure is Au/Pentacene/PMMA/GO/PhO-19-PA/AlOx/Al. The memory transistors clearly showed a large hysteresis with a memory window of around 2 V under an applied gate bias from 4 V to -5 V. The stored charge within the graphene oxide charge trap layer was measured to be 2.9 × 1012 cm -2. The low voltage memory transistor operated well under constant applied gate voltage and time with varying programming times (pulse duration) and voltage pulses (pulse amplitude). In addition, the drain current (I ds) after programming and erasing remained in their pristine state after 104 s and are expected to be retained for more than one year. © 2014 Elsevier B.V. All rights reserved.

Research Area(s)

  • Graphene oxide, Hybrid gate dielectric, Low voltage organic transistor, Organic memory transistor, Self-assembled monolayer

Citation Format(s)

Low operational voltage and high performance organic field effect memory transistor with solution processed graphene oxide charge storage media. / Kim, Tae-Wook; Cernetic, Nathan; Gao, Yan; Bae, Sukang; Lee, Sanghyun; Ma, Hong; Chen, Hongzheng; Jen, Alex K.-Y.

In: Organic Electronics: physics, materials, applications, Vol. 15, No. 11, 11.2014, p. 2775-2782.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review