Low loss dielectric ridge waveguide based on high resistivity silicon for E11y Mode Propagation at 750-1000GHz

Haotian Zhu; Quan Xue; Stella W. Pang; Jianan Hui; Xinghai Zhao

doi:10.1109/MWSYM.2015.7166975

Low loss dielectric ridge waveguide based on high resistivity silicon for E₁₁^y Mode Propagation at 750-1000GHz

Haotian Zhu, Quan Xue, Stella W. Pang, Jianan Hui, Xinghai Zhao

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

3 Citations (Scopus)

Abstract

In this paper, dielectric ribbon waveguides (DRWs) are designed to work at 750-1000 GHz. In this frequency band, the Deep Reactive Ion Etching (DRIE) of high resistivity silicon fabrication process is selected to fabricate the DRW. Our experiments show that the average attenuation constant of DRW is merely 0.107dB/mm at 750-1000GHz. Good agreements between the measured and simulated results are observed.

Original language	English
Title of host publication	2015 IEEE MTT-S International Microwave Symposium
Publisher	IEEE
ISBN (Print)	9781479982752
DOIs	https://doi.org/10.1109/MWSYM.2015.7166975
Publication status	Presented - May 2015
Event	2015 IEEE MTT-S International Microwave Symposium (IMS 2015) - Phoenix, United States Duration: 17 May 2015 → 22 May 2015

Publication series

Name	IEEE MTT-S International Microwave Symposium
ISSN (Print)	0149-645X
ISSN (Electronic)	2576-7216

Conference

Conference	2015 IEEE MTT-S International Microwave Symposium (IMS 2015)
Place	United States
City	Phoenix
Period	17/05/15 → 22/05/15

Research Keywords

Deep Reactive Ion Etch (DRIE)
Dielectric Ridge Waveguide (DRW)
high resistivity silicon

Access Output

10.1109/MWSYM.2015.7166975

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Cite this

Zhu, H., Xue, Q., Pang, S. W., Hui, J., & Zhao, X. (2015). Low loss dielectric ridge waveguide based on high resistivity silicon for E₁₁^y Mode Propagation at 750-1000GHz. Unpublished. In 2015 IEEE MTT-S International Microwave Symposium Article 7166975 (IEEE MTT-S International Microwave Symposium). IEEE. Advance online publication. https://doi.org/10.1109/MWSYM.2015.7166975

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title = "Low loss dielectric ridge waveguide based on high resistivity silicon for E11y Mode Propagation at 750-1000GHz",

abstract = "In this paper, dielectric ribbon waveguides (DRWs) are designed to work at 750-1000 GHz. In this frequency band, the Deep Reactive Ion Etching (DRIE) of high resistivity silicon fabrication process is selected to fabricate the DRW. Our experiments show that the average attenuation constant of DRW is merely 0.107dB/mm at 750-1000GHz. Good agreements between the measured and simulated results are observed.",

keywords = "Deep Reactive Ion Etch (DRIE), Dielectric Ridge Waveguide (DRW), high resistivity silicon",

author = "Haotian Zhu and Quan Xue and Pang, {Stella W.} and Jianan Hui and Xinghai Zhao",

year = "2015",

month = may,

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language = "English",

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series = "IEEE MTT-S International Microwave Symposium",

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Zhu, H, Xue, Q, Pang, SW , Hui, J & Zhao, X 2015, Low loss dielectric ridge waveguide based on high resistivity silicon for E₁₁^y Mode Propagation at 750-1000GHz. in 2015 IEEE MTT-S International Microwave Symposium., 7166975, IEEE MTT-S International Microwave Symposium, IEEE, 2015 IEEE MTT-S International Microwave Symposium (IMS 2015), Phoenix, Arizona, United States, 17/05/15. https://doi.org/10.1109/MWSYM.2015.7166975

Low loss dielectric ridge waveguide based on high resistivity silicon for E₁₁^y Mode Propagation at 750-1000GHz. / Zhu, Haotian; Xue, Quan; Pang, Stella W. et al.
2015 IEEE MTT-S International Microwave Symposium. IEEE, 2015. 7166975 (IEEE MTT-S International Microwave Symposium).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

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