Low gap amorphous GaN1-xAsx alloys grown on glass substrate

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • S. V. Novikov
  • R. Broesler
  • Z. Liliental-Weber
  • A. X. Levander
  • V. M. Kao
  • O. D. Dubon
  • J. Wu
  • W. Walukiewicz
  • C. T. Foxon

Detail(s)

Original languageEnglish
Article number101906
Journal / PublicationApplied Physics Letters
Volume97
Issue number10
Publication statusPublished - 6 Sept 2010
Externally publishedYes

Abstract

Amorphous GaN1-x Asx layers with As content in the range of x=0.1 to 0.6 were grown by molecular beam epitaxy on Pyrex glass substrate. These alloys exhibit a wide range of band gap values from 2.2 to 1.3 eV. We found that the density of the amorphous films is ∼0.8-0.85 of their corresponding crystalline value. These amorphous films have smooth morphology, homogeneous composition, and sharp well defined optical absorption edges. The measured band gap values for the crystalline and amorphous GaN1-x Asx alloys are in excellent agreement with the predictions of the band anticrossing model. The high absorption coefficient of ∼10 5cm-1 for the amorphous GaN1-xAsx films suggests that relatively thin films (on the order of 1 μm) are necessary for photovoltaic application. © 2010 American Institute of Physics.

Citation Format(s)

Low gap amorphous GaN1-xAsx alloys grown on glass substrate. / Yu, K. M.; Novikov, S. V.; Broesler, R. et al.
In: Applied Physics Letters, Vol. 97, No. 10, 101906, 06.09.2010.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review