Low-dielectric constant SiO(F,C) films for ULSI interconnections prepared by CF4 plasma ion implantation

Yuanzhong Zhou; Shu Qin; Chung Chan; Paul K. Chu

doi:10.1557/PROC-511-63

Low-dielectric constant SiO(F,C) films for ULSI interconnections prepared by CF₄ plasma ion implantation

Yuanzhong Zhou
, Shu Qin
, Chung Chan
, Paul K. Chu

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

4 Citations (Scopus)

Abstract

Plasma ion implantation (PII) doping technique has been utilized to prepare a new low-dielectric constant (low k) material SiO(F,C). Fluorine and carbon were implanted into SiO₂ films by CF₄ PII using an ICP plasma reactor. The effective dielectric constant of the films was significantly reduced after PII doping. An analysis of a double layer model indicated that a high quality dielectric layer with a dielectric constant down to 2.8 can be achieved by an optimized PII process. Contrasting to other conventional low-k material techniques, PII process also improved bulk resistivity and electrical field breakdown strength. The improvement possibly resulted from adding carbon into the films. The etching effect of CF₄ PII could be beneficial to planarization and gap filling of dielectric interlayer.

Original language	English
Title of host publication	Proceedings of MRS Meetings
Subtitle of host publication	Symposium E—Low-Dielectric Constant Materials and Applications in Microelectronics IV
Editors	C Chiang, JT Wetzel, TM Lu, PS Ho
Pages	63-68
Volume	511
DOIs	https://doi.org/10.1557/PROC-511-63
Publication status	Published - Apr 1998
Event	1998 MRS Spring Meeting - San Francisco, United States Duration: 13 Apr 1998 → 17 Apr 1998

Publication series

Name	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
ISSN (Print)	0272-9172

Conference

Conference	1998 MRS Spring Meeting
Place	United States
City	San Francisco
Period	13/04/98 → 17/04/98

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Zhou, Y., Qin, S., Chan, C., & Chu, P. K. (1998). Low-dielectric constant SiO(F,C) films for ULSI interconnections prepared by CF₄ plasma ion implantation. In C. Chiang, JT. Wetzel, TM. Lu, & PS. Ho (Eds.), Proceedings of MRS Meetings: Symposium E—Low-Dielectric Constant Materials and Applications in Microelectronics IV (Vol. 511, pp. 63-68). (Materials Research Society Symposium - Proceedings). https://doi.org/10.1557/PROC-511-63

Zhou, Yuanzhong ; Qin, Shu ; Chan, Chung et al. / Low-dielectric constant SiO(F,C) films for ULSI interconnections prepared by CF₄ plasma ion implantation. Proceedings of MRS Meetings: Symposium E—Low-Dielectric Constant Materials and Applications in Microelectronics IV. editor / C Chiang ; JT Wetzel ; TM Lu ; PS Ho. Vol. 511 1998. pp. 63-68 (Materials Research Society Symposium - Proceedings).

@inproceedings{64c9e4183a754288b82b32bdb24b4b70,

title = "Low-dielectric constant SiO(F,C) films for ULSI interconnections prepared by CF4 plasma ion implantation",

abstract = "Plasma ion implantation (PII) doping technique has been utilized to prepare a new low-dielectric constant (low k) material SiO(F,C). Fluorine and carbon were implanted into SiO2 films by CF4 PII using an ICP plasma reactor. The effective dielectric constant of the films was significantly reduced after PII doping. An analysis of a double layer model indicated that a high quality dielectric layer with a dielectric constant down to 2.8 can be achieved by an optimized PII process. Contrasting to other conventional low-k material techniques, PII process also improved bulk resistivity and electrical field breakdown strength. The improvement possibly resulted from adding carbon into the films. The etching effect of CF4 PII could be beneficial to planarization and gap filling of dielectric interlayer.",

author = "Yuanzhong Zhou and Shu Qin and Chung Chan and Chu, \{Paul K.\}",

year = "1998",

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doi = "10.1557/PROC-511-63",

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Zhou, Y, Qin, S, Chan, C & Chu, PK 1998, Low-dielectric constant SiO(F,C) films for ULSI interconnections prepared by CF₄ plasma ion implantation. in C Chiang, JT Wetzel, TM Lu & PS Ho (eds), Proceedings of MRS Meetings: Symposium E—Low-Dielectric Constant Materials and Applications in Microelectronics IV. vol. 511, Materials Research Society Symposium - Proceedings, pp. 63-68, 1998 MRS Spring Meeting, San Francisco, California, United States, 13/04/98. https://doi.org/10.1557/PROC-511-63

Low-dielectric constant SiO(F,C) films for ULSI interconnections prepared by CF₄ plasma ion implantation. / Zhou, Yuanzhong; Qin, Shu; Chan, Chung et al.
Proceedings of MRS Meetings: Symposium E—Low-Dielectric Constant Materials and Applications in Microelectronics IV. ed. / C Chiang; JT Wetzel; TM Lu; PS Ho. Vol. 511 1998. p. 63-68 (Materials Research Society Symposium - Proceedings).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Low-dielectric constant SiO(F,C) films for ULSI interconnections prepared by CF4 plasma ion implantation

AU - Zhou, Yuanzhong

AU - Qin, Shu

AU - Chan, Chung

AU - Chu, Paul K.

PY - 1998/4

Y1 - 1998/4

N2 - Plasma ion implantation (PII) doping technique has been utilized to prepare a new low-dielectric constant (low k) material SiO(F,C). Fluorine and carbon were implanted into SiO2 films by CF4 PII using an ICP plasma reactor. The effective dielectric constant of the films was significantly reduced after PII doping. An analysis of a double layer model indicated that a high quality dielectric layer with a dielectric constant down to 2.8 can be achieved by an optimized PII process. Contrasting to other conventional low-k material techniques, PII process also improved bulk resistivity and electrical field breakdown strength. The improvement possibly resulted from adding carbon into the films. The etching effect of CF4 PII could be beneficial to planarization and gap filling of dielectric interlayer.

AB - Plasma ion implantation (PII) doping technique has been utilized to prepare a new low-dielectric constant (low k) material SiO(F,C). Fluorine and carbon were implanted into SiO2 films by CF4 PII using an ICP plasma reactor. The effective dielectric constant of the films was significantly reduced after PII doping. An analysis of a double layer model indicated that a high quality dielectric layer with a dielectric constant down to 2.8 can be achieved by an optimized PII process. Contrasting to other conventional low-k material techniques, PII process also improved bulk resistivity and electrical field breakdown strength. The improvement possibly resulted from adding carbon into the films. The etching effect of CF4 PII could be beneficial to planarization and gap filling of dielectric interlayer.

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U2 - 10.1557/PROC-511-63

DO - 10.1557/PROC-511-63

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 1-55899-417-3

VL - 511

T3 - Materials Research Society Symposium - Proceedings

SP - 63

EP - 68

BT - Proceedings of MRS Meetings

A2 - Chiang, C

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T2 - 1998 MRS Spring Meeting

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Zhou Y, Qin S, Chan C, Chu PK. Low-dielectric constant SiO(F,C) films for ULSI interconnections prepared by CF₄ plasma ion implantation. In Chiang C, Wetzel JT, Lu TM, Ho PS, editors, Proceedings of MRS Meetings: Symposium E—Low-Dielectric Constant Materials and Applications in Microelectronics IV. Vol. 511. 1998. p. 63-68. (Materials Research Society Symposium - Proceedings). doi: 10.1557/PROC-511-63